Publications (2)0 Total impact
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Article: Effect of material parameters on the open-circuit voltage in a GaInAsSb thermophotovoltaic cell
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ABSTRACT: In this paper, a numerical simulation on the open-circuit voltage (VOC) of the P-GaSb window/P-Ga0.8In0.2As0.18Sb0.82 emitter/N-Ga0.8In0.2As0.18Sb0.82 base/N-GaSb structure thermophotovoltaic (TPV) cell is performed and an analysis of the effects of device parameters on VOC is presented. The simulations are carried out with the fixed spectral control filter and for the radiator temperature of Trad = 950 °C, cell temperature of Tdio = 27 °C, the radiation photons are injected from the front P-region. The thick P-Ga0.8In0.2As0.18Sb0.82 emitter with the longer minority carrier diffusion length is the main optical absorption region. The simulated results are compared with the available experimental data, and a good agreement is obtained. The effects of the layer thickness, carrier concentration, injection level and main recombination mechanisms (e.g. the radiative, Auger, bulk Shockley–Read–Hall (SRH) and surface recombination) of the P-Ga0.8In0.2As0.18Sb0.82 emitter and N-Ga0.8In0.2As0.18Sb0.82 base on VOC are analyzed. It indicates that the parameters of the emitter region have stronger effect than that of the base region on VOC. Dependence of VOC on the material parameters of P-GaSb window layer is also analyzed, both the carrier concentration and thickness of P-GaSb window layer have effect on VOC. Moreover, adding a back surface reflector (BSR) to the TPV cell can increase VOC.Infrared Physics & Technology. -
Article: Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes
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ABSTRACT: In this paper, a simulation and analysis on the short-circuit current density (Jsc) of the P-GaSb window/P-GaxIn1−xAs1−ySby emitter/N-GaxIn1−xAs1−ySby base/N-GaSb substrate structure is performed. The simulations are carried out with a fixed spectral control filter at a radiator temperature (Trad) of 950 °C, diode temperature (Tdio) of 27 °C and diode bandgap (Eg) of 0.5 eV. The radiation photons are injected from the front P-side. Expressions for minority carrier mobility and absorption coefficient of GaxIn1−xAs1−ySby semiconductors are derived from Caughey–Thomas and Adachi’s model, respectively. The P-GaxIn1−xAs1−ySby emitter with a much longer diffusion length is adopted as the main optical absorption region and the N-GaxIn1−xAs1−ySby base region contribute little to Jsc. The effect of P-GaSb window and P-GaxIn1−xAs1−ySby emitter region parameters on Jsc is mainly analyzed. Dependence of Jsc on thickness and carrier concentration of the window are analyzed; these two parameters need to be properly selected to improve Jsc. Contributions from the main carrier recombination mechanisms in the emitter region are considered; Jsc can be improved by suppressing the carrier recombination rate. Dependence of Jsc on the carrier concentration and layer thickness of the emitter P-region are also analyzed; these two parameters have strong effect on Jsc. Moreover, adding a back surface reflector (BSR) to the diode can improve Jsc. The simulated results are compared with the available experimental data and are found to be in good agreement. These theoretical simulations help us to better understand the electro-optical behavior of GaxIn1−xAs1−ySby TPV diode and can be utilized for performance enhancement through optimization of the device structure.Infrared Physics & Technology.
