Qun Zhang

Publications (5)2.98 Total impact

• Article: Development of novel tungsten-doped high mobility transparent conductive In2O3 thin films

  Xifeng Li, Qun Zhang, Weina Miao, Li Huang, Zhuangjian Zhang, Zhongyi Hua
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  ABSTRACT: A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In ₂ O ₃ . IWO thin films were grown with resistivity of 4.4×10^-4 Ω cm , carrier mobility of 52.8 cm ² V ^-1 S ^-1 ; transmittance exceeding 80% at wavelengths between 380 and 900 nm , and average roughness of 7.5 nm .
  Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 10/2006; · 1.25 Impact Factor
• Article: The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target

  Xifeng Li, Weina Miao, Qun Zhang, Li Huang, Zhuangjian Zhang, Zhongyi Hua
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  ABSTRACT: High performance molybdenum-doped indium oxide (IMO) films were deposited on slide glass substrates from metallic targets by using dc reactive magnetron sputtering at room temperature. The structural, electrical and optical properties have been investigated as functions of target composition and oxygen partial pressure. The deposited films were smooth and amorphous, as determined by scanning electron microscopy and x-ray diffraction, respectively. The results revealed that the as-deposited molybdenum-doped In2O3 films show good electrical property and high optical transmittance, as well as high infrared transmittance. The films prepared at oxygen partial pressure of 3.8 × 10−2 Pa and with 2 wt% Mo-doped target are characteristic of high Hall mobility of 20.2 cm2 V−1 s−1, carrier concentration of 5.2 × 1020 cm−3, and the average optical transmittance excess 90% in the visible region from 400 to 700 nm. Thus IMO films may be a potential material for novel optoelectrical devices such as an organic light-emitting diode.
  Semiconductor Science and Technology 06/2005; 20(8):823. · 1.72 Impact Factor
• Article: Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

  Xifeng Li, Weina Miao, Qun Zhang, Li Huang, Zhuangjian Zhang, Zhongyi Hua
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  ABSTRACT: High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.
  Journal of Materials Research. 05/2005; 20(06):1404 - 1408.
• Article: Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

  Wei-na Miao, Xi-feng Li, Qun Zhang, Li Huang, Zhuang-jian Zhang, Li Zhang, Xue-jian Yan
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  ABSTRACT: An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5.9 × 10− 4 Ω cm, the carrier concentration of 5.2 × 1020 cm− 3, the carrier mobility of 20.2 cm2 V− 1 s− 1, and an average visible transmittance of about 90.1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0.8 nm was obtained.
  Thin Solid Films.
• Article: Transparent conductive oxide thin films of tungsten-doped indium oxide

  Xifeng Li, Qun Zhang, Weina Miao, Li Huang, Zhuangjian Zhang
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  ABSTRACT: Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 × 10− 4 Ω·cm was reproducibly obtained, with carrier mobility greater than 57 cm2 V− 1 s− 1 and carrier concentration of 4.0 × 1020 cm− 3, as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222).
  Thin Solid Films.