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ABSTRACT: Linear and two-photon laser testing is used to investigate the single-event latchup sensitive depth of SRAM CY7C1069 embedded in CARMEN satellite experiment. Results are discussed and compared with heavy ion and flight data.
IEEE Transactions on Nuclear Science 01/2012; · 1.45 Impact Factor
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Y. Gonzalez-Velo,
J. Boch,
F. Pichot,
J. Mekki,
N.J.-H. Roche,
S. Perez,
C. Deneau,
J.-R. Vaille,
L. Dusseau,
F. Saigne, E. Lorfevre,
R.D. Schrimpf
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ABSTRACT: A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided.
IEEE Transactions on Nuclear Science 07/2011; · 1.45 Impact Factor
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ABSTRACT: Displacement damage dose was measured over 26 months on the CARMEN-2 experiment using the feedback loop of an Optically Stimulated Luminescence (OSL) sensor. These in-flight results are analyzed and discussed addressing the issue of temperature dependence and energy correction. A comparison between in-flight data and ground tests measurement validates this method.
IEEE Transactions on Nuclear Science 07/2011; · 1.45 Impact Factor
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ABSTRACT: This paper presents particle flux measurements (protons and electrons) obtained with the ICARE-NG detector on the JASON-2 orbit (1336 km alt., 66° incl.) for the period June 2008-Aug. 2010. At this altitude, the South Atlantic Anomaly is greatly broadened as compared to lower altitudes. Proton flux measurements are made in the range 27.5-290 MeV and electron flux in the range 1.6-3.6 MeV. A great care was taken to assess the influence of the satellite on the particle measurements. Comparison of measurements with the results of the AP8 MIN model are given for protons, taken into account environment anisotropy.
IEEE Transactions on Nuclear Science 07/2011; · 1.45 Impact Factor
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Y.G. Velo,
J. Boch,
N.J.-H. Roche,
S. Perez,
J.-R. Vaille,
L. Dusseau,
F. Saigne, E. Lorfevre,
R.D. Schrimpf,
C. Chatry,
A. Canals
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ABSTRACT: Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to be investigated. In this work, this time-saving technique, the switched dose-rate technique, is applied for the first time to evaluate the behavior of dynamics parameters of a bipolar IC irradiated all pins grounded, and also to evaluate the behavior of static and dynamics parameters of bipolar ICs irradiated under several bias configurations. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.
IEEE Transactions on Nuclear Science 09/2010; · 1.45 Impact Factor
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J. Boch,
Y. Gonzalez Velo,
F. Saigne,
N.J.-H. Roche,
R.D. Schrimpf,
J.-R. Vaille,
L. Dusseau,
C. Chatry, E. Lorfevre,
R. Ecoffet,
A.D. Touboul
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ABSTRACT: The enhanced radiation sensitivity exhibited at low dose rate by many bipolar devices remains one of the main concerns for spacecraft reliability. As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.
IEEE Transactions on Nuclear Science 01/2010; · 1.45 Impact Factor
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F. Bezerra, E. Lorfevre,
R. Ecoffet,
D. Peyre,
C. Binois,
S. Duzellier,
D. Falguere,
T. Nuns,
M. Melotte,
P. Calvel,
R. Marec,
N. Chatry,
W. Falo,
C. Deneau
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ABSTRACT: MEX Experience Module is a part of CARMEN2 instrument launched in June 22 2008 aboard JASON2 satellite. This scientific instrument is dedicated to the study of the effects of space radiation environment on various electronic devices. Among all the phenomena studied in this experiment, this paper focuses on the data collected on destructive SEEs: Latch-up on commercial SRAMs and Burnout on power MOSFETs.
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on; 10/2009
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N.J.-H. Roche,
Y.G. Velo,
L. Dusseau,
J. Boch,
J.-R. Vaille,
F. Saigne,
B. Azais,
G. Auriel, E. Lorfevre,
V. Pouget,
S.P. Buchner,
J.-P. David,
R. Marec,
P. Calvel
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ABSTRACT: An accelerated irradiation technique is used to study dose-ASET synergy effects. The impact of TID on SET is found to be identical when the dose rate is switched from high to low or from low to high.
IEEE Transactions on Nuclear Science 09/2009; · 1.45 Impact Factor
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ABSTRACT: It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit.
IEEE Transactions on Nuclear Science 01/2009; · 1.45 Impact Factor
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D. Peyre,
C. Poivey,
C. Binois,
R. Mangeret,
G. Salvaterra,
M. Beaumel,
F. Pontoni,
T. Bouchet,
L. Pater,
F. Bezerra,
R. Ecoffet, E. Lorfevre,
F. Sturesson,
G. Berger,
J.C. Foy,
B. Piquet
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ABSTRACT: This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss (Phi) is measured versus heavy ions (H.I.) fluence Phi. Post-irradiation-gate-stress-test (PGST) allows measurement of gate breakdown voltage V<sub>BD</sub>(Phi) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate-generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts.
IEEE Transactions on Nuclear Science 09/2008; · 1.45 Impact Factor
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ABSTRACT: Temperature irradiation is shown to cause the fading of the OSL signal. The temperature dependence is modeled using an Arrhenius law. A simple method is proposed to correct this effect a posteriori .
IEEE Transactions on Nuclear Science 01/2008; · 1.45 Impact Factor
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ABSTRACT: A code solving most of the known physical processes conducting to the MOS degradation under total dose constraint has been developed. Two lots of a power MOSFET have been exposed to Co<sup>60</sup> irradiations with various temperature and different bias conditions. The parameters used in the code have been adapted in order to fit the experimental results. According to the simulation results, the physical processes leading to the measured oxide trapped charge and interface traps dependencies are discussed. Different kinetics of degradation when switching the dose rate from high to low and the ELDRS are explained by the electric field inversion due to shallow trapped holes. An estimation of the very low dose rate degradation is done for devices sensitive to ELDRS.
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on; 10/2007
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ABSTRACT: This article presents an experiment module to be launched in 2008 and 2010 on two separate orbits in order to provide total ionizing and displacement damage doses and single event effects measurements on selected sensitive devices.
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on; 10/2007
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ABSTRACT: A contribution to the understanding of total dose degradation using both AC small signal analysis and DC analysis in linear bipolar circuits is proposed. The reasoning is illustrated step by step on the basis of experimental results obtained on the LM 139. It is shown that the input stage is mostly responsible for the degradation up to 20 krad. Above 20 krad, the total degradation is due to a combination of the input and the output stage degradation. The amplifier stage does not play a significant role in the circuit degradation
IEEE Transactions on Nuclear Science 09/2006; · 1.45 Impact Factor
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J.-R. Vaille,
F. Ravotti,
P. Garcia,
M. Glaser,
S. Matias,
K. Idri,
J. Boch, E. Lorfevre,
P.J. McNulty,
F. Saigne,
L. Dusseau
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ABSTRACT: A version of the Optically Stimulated Luminescence (OSL) sensor specifically developed to monitor the dose online in radiation facilities is presented and calibrated with <sup>60</sup>Co. The lowest dose measurable at the extremity of a 20 m cable is 0.3 mGy.
IEEE Transactions on Nuclear Science 01/2006; · 1.45 Impact Factor
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ABSTRACT: The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.
IEEE Transactions on Nuclear Science 01/2006; · 1.45 Impact Factor
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ABSTRACT: GCR contribution to SEE event rates on board of space vehicles is commonly calculated using CREME model which considers the range of ions as infinite. This study aims to identify the error margin due to this hypothesis and the consequences on the simulation beam selection.
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on; 10/2005
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ABSTRACT: Transistors and integrated circuits of silicon MOS and bipolar technologies have been evaluated under Co<sup>60</sup> and proton total dose, and neutron fluence. All the device types, including a SDRAM, present a specific sensitivity to neutron and protons.
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on; 10/2005
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ABSTRACT: A circuit analysis of the LM139 voltage comparator is presented to clarify the roles played by each part of this micro-circuit in determining the total dose-induced degradation. This method, based on both theoretical and experimental data, reveals the input and output stages to be the main portions of the circuit responsible for the device failure.
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on; 10/2005
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ABSTRACT: A device simulator is used to analyze the heavy ion induced failure mechanism in insulated gate bipolar transistors (IGBTs) and to investigate hardening solutions. Single event latchup was already identified as the failure mechanism. Lateral and vertical modifications of the P/sup +/ plug are proposed to reduce the efficiency of the parasitic thyristor, responsible for the latchup, and validated by 2D-simulations on a N-channel IGBT cell structure.
IEEE Transactions on Nuclear Science 01/2000; · 1.45 Impact Factor
