M. N. Drozdov

Russian Academy of Sciences, Moskva, Moscow, Russia

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Publications (132)93.93 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: It was demonstrated that the low-coherence interferometry technique can be successfully applied to real-time substrate temperature evaluation during molecular beam epitaxy in a wide range down to room temperature. The proposed technique was used for formation of silicon layers delta-doped by antimony. Due to shortening of the growth interruptions needed for temperature switching the low-coherence interferometry technique allows improving the crystal quality of the grown samples and reducing the material and time consumption. These advantages become extremely beneficial with lowering of the growth temperatures.
    Journal of Crystal Growth 03/2015; 413:42-45. DOI:10.1016/j.jcrysgro.2014.12.008 · 1.69 Impact Factor
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    ABSTRACT: Hexagonal single-crystalline indium nitride (InN) films on (0001)-oriented sapphire (Al2O3) and (111)-oriented fianite (yttria-stabilized zirconia, YSZ) substrates and on (0001)-oriented GaN/Al2O3 templates have been grown at a record high rate of 10 μm/h by the method of metalorganic vapor phase epitaxy with nitrogen activation in plasma of electron cyclotron resonance discharge generated by gyrotron radiation. It is established that the use of fianite substrates significantly improves the structural perfection and photoluminescent properties of InN films as compared to those grown on sapphire and templates. Undoped InN films exhibit n-type conductivity with electron concentrations within n = 8.0 × 1019-4.9 × 1020 cm−3 and room-temperature mobilities up to 180 cm2/(V s).
    Technical Physics Letters 03/2015; 41(3):266-269. DOI:10.1134/S1063785015030189 · 0.58 Impact Factor
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    ABSTRACT: Time-of-flight Secondary Ion Mass Spectrometry and High-resolution Transmission Electron Microscopy study is reported on depth profiling of 375 nm-thick multilayer La/B4C interferential mirrors produced by magnetron sputtering for X-ray radiation at the wavelength of 6.7 nm. The introduction of ultra-thin (0.5 nm) carbon barrier layer inside each period of ca. 7.5 nm suppressed the broadening of interface regions, decreased the width of La and B profiles and as a result improved the reflectance of mirrors. Depending on the layers’ sequence (La/C/B4C or La/B4C/C upward the Si substrate), two different mechanisms – chemical interaction and reaction diffusion, were employed for qualitative explanation of the obtained results.
    Thin Solid Films 01/2015; 577. DOI:10.1016/j.tsf.2015.01.025 · 2.13 Impact Factor
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    ABSTRACT: The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light�emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular beam epitaxy to grow light emitting SiGe structures of high crystalline quality on such substrates.
    Semiconductors 01/2015; 49(8):1104-1110. DOI:10.1134/S1063782615080059 · 0.71 Impact Factor
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    ABSTRACT: The conditions for producing thin homogeneous mirror-smooth Ge layers on 2-inch Si substrates by means of hot wire chemical vapor deposition (HWCVD) are determined. Ge layers thickness of 200 nm have the structure of epitaxial mosaic single crystal with almost complete relaxation of elastic stresses. Value of X-ray diffraction rocking curve half-width was less 6 '. The density of threading dislocations in the Ge layers was in the range of (3-6) × 105 cm-2, and the value of the root-mean-square surface roughness was less than 0.8 nm.
    Technical Physics Letters 01/2015; 41(1). DOI:10.1134/S1063785015010113 · 0.58 Impact Factor
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    ABSTRACT: Chemical structure of the top Al/C-60 interface in Al/C-60/ITO sandwich structures (Al is the thermally deposited top aluminum layer, C-60 is the thermally deposited fullerene layer, ITO is the double indiumtin oxide, the role of the substrate is played by Lavsan (polyethylene terephthalate), or glass) is studied by time-of-flight secondary mass spectrometry (ToF-SIMS) with depth profiling. The study is stimulated by the recently found specific features of the photovoltaic effect in fullerene-containing sandwich structures on glass or polymer substrates. It is found that the chemical composition of the top Al/C-60 interface is not the same on different substrates. This leads to differences in the photovoltaic conversion parameters for more complex thin-film structures with a molecular heterojunction.
    Semiconductors 01/2015; 49(1):134-137. DOI:10.1134/S1063782615010261 · 0.71 Impact Factor
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    ABSTRACT: It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.
    Semiconductors 01/2015; 49(1):19-22. DOI:10.1134/S1063782615010066 · 0.71 Impact Factor
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    ABSTRACT: Model Al/C60/ITO sandwich devices were fabricated, where Al is a magnetron sputtered aluminum layer (top electrode); C60 is a buckminsterfullerene layer routinely deposited by thermal evaporation in vacuum; and ITO is an indium tin oxide layer (bottom electrode). These devices demonstrate weak rectification in the dark and almost negligible photovoltaic activity under illumination, if polyethyleneterephthalate (PET) is used as substrate. If the substrate is glass, inversion of rectification occurs, accompanied by a rather more pronounced photovoltaic effect (in the reverse direction, too) than in their Al/C60/ITO/PET counterparts. Secondary ion mass spectroscopy (SIMS) with depth-profiling suggests that this effect is associated with the differences in the chemical composition of the top Al/C60 interface in devices on PET and on glass. Such differences result from migration of admixtures from the substrate towards the top electrode. Since (photo)electrical properties of the devices reflect the dominating contribution of one of the two interfaces (top Al/C60 and bottom C60/ITO), rectification can be reversed by amending either interface. This fact is to be taken into account when comparing efficiency of multilayer photovoltaic cells (e.g., with a heterojunction) on different substrates.
    Synthetic Metals 09/2014; 195:91–96. DOI:10.1016/j.synthmet.2014.05.006 · 2.22 Impact Factor
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    ABSTRACT: Methods for minimizing nonlinear matrix effects in the quantitative determination of germanium concentrations in Gex Si1 − x layers by secondary ion mass spectrometry are discussed. The analysis conditions with positive SiCs+, GeCs+ and negative Ge−, Si− secondary ions produced during sputtering by cesium ions are used in the TOF.SIMS-5 setup with a time-of-flight mass analyzer. In contrast to published works for TOF.SIMS setups, the linear dependence of the ion-concentration ratio Ge−/Si− on x/(1 − x) is shown. Two new linear calibrations for the germanium concentration as a function of the cluster Ge 2− secondary ion yield are proposed. The calibration factors are determined for all linear calibrations at various energies of sputtered cesium ions and Bi+ and probe Bi 3+ ions. It is shown for the first time that the best depth resolution among the possible conditions of quantitative germanium depth profiling in Gex Si1 − x /Si multilayer heterostructures is provided by the calibration mode using elemental Ge− and Si− negative secondary ions.
    Semiconductors 08/2014; 48(8):1109-1117. DOI:10.1134/S1063782614080090 · 0.71 Impact Factor
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    ABSTRACT: A new approach to the diagnostics of Gex Si1 − x /Si heterostructures with self-assembled nanoislands, which is based on the method of secondary ion mass spectrometry (SIMS) using secondary Ge2 cluster ions, is discussed. Calibration dependences of the yield of atomic (Ge) and cluster (Ge2) secondary ions on the concentration of germanium in homogeneous Gex Si1 − x have been obtained for a TOF.SIMS-5 setup. It is established that, in contrast to the well-known linear dependence of 74Ge/30Si ∫ x/(1 − x), the secondary Ge2 cluster ions obey the quadratic relation Ge2/30Si ∫ [x/(1 − x)]2. It is shown that the proposed SIMS depth profiling using nonlinear calibration relations for Ge2 cluster ions provides expanded information on multilayer Gex Si1 − x /Si heterostructures with nanoislands. By using this approach, without additional a priori data on the sample structure, it is possible to distinguish planar layers and GeSi layers with three-dimensional nanoislands, estimate the height of islands, reveal the presence of a wetting layer, and trace the evolution of islands during their formation in a multilayer structure.
    Technical Physics Letters 07/2014; 40(7):601-605. DOI:10.1134/S1063785014070190 · 0.58 Impact Factor
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    D. V. Yurasov · M. N. Drozdov · N. D. Zakharov · A.V. Novikov
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    ABSTRACT: In the present work features of antimony (Sb) segregation in SiGe heterostructures grown by molecular beam epitaxy are investigated. Dependences of the segregation strength on growth temperature, composition and elastic strains are obtained. It is shown that growth conditions and parameters of the structure exert an interrelated impact on the impurity segregation: the influence of the structure parameters depends on growth temperature. Moreover, the alloy composition is found to be a much more significant factor than the elastic strains in SiGe layers. Obtained dependences of Sb segregation on growth conditions and structure parameters were used for formation of selectively doped SiGe heterostructures.
    Journal of Crystal Growth 06/2014; 396:66–70. DOI:10.1016/j.jcrysgro.2014.03.042 · 1.69 Impact Factor
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    ABSTRACT: The germanium-distribution profile is investigated in a Si/SiO2/Si structure after the implantation of 74Ge into SiO2 dielectric layer, bonding with the Si device layer, and high-temperature annealing. The anomalously high transport and accumulation of 74Ge atoms near the SiO2/Si interface far from the bonded boundary is found. The observed 74Ge distribution is beyond the framework of the existing model of diffusion of Ge in Si and SiO2 after postimplantation annealing. A modified model of diffusion of Ge atoms near the Si/SiO2 interface qualitatively explaining the observed features is proposed.
    Semiconductors 05/2014; 48(5):612-616. DOI:10.1134/S1063782614050170 · 0.71 Impact Factor
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    ABSTRACT: A study of vertical transport in δ-doped SiGe/Si heterostructures is presented. An asymmetrical triple barrier structure was grown with a δ-layer of boron impurity in the center of a narrow quantum well. The growth procedure was followed by conventional processing including photolithography, plasma etching and magnetron sputtering. Secondary-ion mass-spectroscopy depth profiling and high resolution x-ray diffraction were used to control the as-grown structure. The conductance of the structure was measured at liquid helium temperature and analyzed. All pronounced resonances were identified. The resonant feature near 60 mV is attributed to impurity-assisted tunneling, which is supported by calculation of the binding energy of the acceptor in the narrower quantum well.
    Physica E Low-dimensional Systems and Nanostructures 03/2014; 57:42–46. DOI:10.1016/j.physe.2013.10.022 · 1.86 Impact Factor
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    ABSTRACT: A new approach to analyzing the X-ray diffraction spectra of multilayer structures is described. This approach is based on information on the layer growth time. As compared to the standard analysis, the number of variable parameters decreases. The stability and rate of convergence of fitting a calculated spectrum to an experimental spectrum increase in the case of a large number of layers and little-information experimental data. The approach is executed by imposing relations on the model parameters during the calculation of spectra using the Bruker DIFFRAC.Leptos software package. A multilayer SiGe/Si structure is used to compare the new approach and the standard procedure of analysis. The correctness of the new approach is supported by a comparison with the experimental data obtained by secondary-ion mass spectrometry and transmission electron microscopy. The advantages and limitations of the proposed method are discussed.
    Technical Physics 02/2014; 59(3):402-406. DOI:10.1134/S1063784214030293 · 0.54 Impact Factor
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    ABSTRACT: A comprehensive study of the crystal structure and distribution of impurities in GaAs nanoheterosystems containing InGaAs quantum wells and delta ‹Mn›-doped layers is performed. High-resolution transmission electronmicroscopy, energy dispersive spectroscopy, and X-ray diffraction are used in particular. It is shown that our technique allows growing structures with embedded delta layers of magnetic impurities epitaxially.
    Bulletin of the Russian Academy of Sciences Physics 01/2014; 78(1):6-8. DOI:10.3103/S1062873814010055
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    ABSTRACT: The investigation of vertical transport in delta-doped SiGe/Si heterostructures has been presented. The asymmetrical triple barrier structure was grown by MBE technique. The delta layer of boron impurity was placed into the center of narrower quantum well. The growth procedure was followed by conventional processing including photolithography and plasma etching and magnetron sputtering. SIMS and X-rays diagnostics have been used to control the desired structure. The conductance of the structure has been measured at liquid helium temperature and analyzed. All pronounced resonances have been identified. The resonant feature near 60 mV has to be attributed to impurity-assisted tunneling that is supported by calculation of binding energy of the acceptor in the narrower quantum well.
    31st International Conference on the Physics of Semiconductors (ICPS); 12/2013
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    ABSTRACT: In this publication, we report the results of studying a multilayerd nonperiodic SiGe/Si structure by the methods of X-ray diffractometry, grazing-angle X-ray reflectometry, and secondary-ion mass spectrometry (SIMS). Special attention is paid to the processing of the component distribution profile using the SIMS method and to consideration of the most significant experimental distortions introduced by this method. A method for processing the measured composition distribution profile with subsequent consideration of the influence of matrix effects, variation in the etching rate, and remnants of ion sputtering is suggested. The results of such processing are compared with a structure model obtained upon combined analysis of X-ray diffractometry and grazing-angle reflectometry data. Good agreement between the results is established. It is shown that the combined use of independent techniques makes it possible to improve the methods of secondary-ion mass spectrometry and grazing-incidence reflectometry as applied to an analysis of multilayered heteroepitaxial structures (to increase the accuracy and informativity of these methods).
    Semiconductors 11/2013; 47(12):1556-1561. DOI:10.1134/S1063782613120221 · 0.71 Impact Factor
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    ABSTRACT: A new variant of depth profiling for thin-film fullerene-containing organic structures by the method of time-of-flight (TOF) secondary ion mass spectrometry (SIMS) on a TOF.SIMS-5 setup is described. The dependence of the yield of C60 molecular ions on the energy of sputtering ions has been revealed and studied. At an energy of sputtering Cs+ ions below 1 keV, the intensity of C60 molecular ions is sufficiently high to make possible both elemental and molecular depth profiling of multicomponent (multilayer) thin-film structures. Promising applications of TOF-SIMS depth profiling for obtaining more detailed information on the real molecular composition of functional organic materials are shown.
    Technical Physics Letters 11/2013; 39(12):1097-1100. DOI:10.1134/S1063785013120183 · 0.58 Impact Factor
  • M. N. Drozdov · A. V. Novikov · D. V. Yurasov
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    ABSTRACT: The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.
    Semiconductors 11/2013; 47(11):1481-1484. DOI:10.1134/S1063782613110079 · 0.71 Impact Factor
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    ABSTRACT: The results of experimental studies of the effect of rapid thermal annealing on low-barrier diode structures used in the fabrication of microwave detectors for imaging arrays are indicative of an increase in the effective barrier height. Assuming that this effect is related to the diffusion spreading of the silicon δ-doped layer, which determines charge transport in the modified diode, a theoretical model is developed and the diffusion coefficient for silicon in the near-surface region of gallium arsenide (D ≈ 2 × 10−14 cm2/s at 600°C) is estimated. A comparison with published data makes it possible to assume that diffusion in the near-surface layers is greatly facilitated compared to that in the bulk. It is suggested that the cause of acceleration of the diffusion can be a high electric field formed by the charged plane of the detector and it can also be related to an increased density of defects near the surface. The practical result consists in the emerging possibility of increasing (within a certain range) the effective barrier height in the grown structures, which will make it possible to adapt the parameters of low-barrier diodes to the optimal value in order to obtain sensitive detectors.
    Semiconductors 11/2013; 47(11):1470-1474. DOI:10.1134/S106378261311016X · 0.71 Impact Factor

Publication Stats

232 Citations
93.93 Total Impact Points

Institutions

  • 2008–2015
    • Russian Academy of Sciences
      • Institute for Physics of Microstructures
      Moskva, Moscow, Russia
  • 1999–2015
    • Institute for Physics of Microstructures RAS
      Afonino, Nizjnij Novgorod, Russia
  • 2014
    • Nizhny Novgorod State University
      Gorkey, Nizjnij Novgorod, Russia
  • 2011
    • Novgorod State University
      Nowgorod, Novgorod, Russia