C. Anton

Publications (4)0 Total impact

• Source

  Available from: Mircea Dragoman

  Conference Proceeding: Ultraviolet MSM photodetector based on GaN micromachining

  A. Muller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C. Buiculescu, I. Petrini, C. Anton, D. Dascalu, A. Kostopoulos
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  ABSTRACT: This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are annalised. Very low dark currents and unexpected high values, in the range of 50-100 A/W for the UV detectors responsivity have been obtained.
  Semiconductor Conference, 2008. CAS 2008. International; 11/2008
• Conference Proceeding: Microphysical characterization and residual stress analysts of thinpolyimide membranes on GaAs substrate, support for micromachinedstructures

  I. Petrini, A. Muller, S. Iordanescu, D. Vasilache, G. Constantinidis, F. Giacomozzi, C. Anton
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  ABSTRACT: This paper presents measurements of micromechanical properties of thin polyimide membranes realised by micromachining of SI GaAs substrate, as well as the residual stress analysis of these membranes. AFM, SEM, and white light interferometry as well as a residual stress measurement procedure, have been used
  Semiconductor Conference, 2000. CAS 2000 Proceedings. International; 02/2000
• Conference Proceeding: Broadband microwave PIN diode attenuators

  S. Iordanescu, G. Simion, C. Anton, A. Muller
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  ABSTRACT: The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate. Insertion losses less than 2 dB and a dynamic range of 27 dB for two octave bandwidth were obtained
  Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International; 11/1998
• Conference Proceeding: Passive devices on GaAs substrate for MMICs applications

  A. Muller, S. Simion, M. Dragoman, S. Iordanescu, I. Petrini, C. Anton, D. Vasilache, V. Avramescu, A. Coraci, F. Craciunoiu
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  ABSTRACT: The paper presents the manufacturing and the measurements of a few type of the passive components dedicated to GaAs based MMICs. Mesa type resistors (with values in the range of 50...1000 Ω) were manufactured on a 0.15 μm thick n^- layer (10¹⁷) cm^-3 grown on SI GaAs. Also, rectangular spiral inductors, loop inductors and interdigitated capacitor structures were realized using AuGe deposition on GaAs SI substrate and lift-off metallization technique. The computed values for the microwave parameters of the manufactured components are in good agreement with the experimental ones
  Semiconductor Conference, 1996., International; 11/1996