Hui Hu

Shandong University, Jinan, Shandong Sheng, China

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Publications (38)57.19 Total impact

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    ABSTRACT: Single-mode optical waveguides in LiNbO<sub>3</sub> substrate with loss as low as 0.17dB/cm were fabricated by a multi-energy low-dose ion implantation technology and cumulative annealing treatment. A waveguide Y-Branch splitter was demonstrated. Index profile in waveguide is described based on the ion implantation-induced damage profile, and propagation property in waveguide is simulated. Simulation results show a good consistence with the measured ones.
    Optics Express 09/2012; 20(19):21114-8. · 3.55 Impact Factor
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    ABSTRACT: The Li Nb O <sub>3</sub> planar optical waveguides are fabricated by 3.0- MeV C <sup>+</sup> ion implantation at the doses of 1.5–10.5×10(14) cm <sup>-2</sup> . Both TE and TM modes are observed by prism coupling method ( m lines). The reconstructed refractive index profiles of the guiding region show that extraordinary index has an enhancement compared with the substrate of Li Nb O <sub>3</sub> , while ordinary index experiences a typical “barrier” change. The modal analysis of the waveguides shows a good confinement of light in fundamental TM mode. The tendency of effective refractive index (decrease after the annealing for TE and increase after annealing for TM) suggests a moderate recovery of the lattice.
    Journal of Applied Physics 09/2005; · 2.21 Impact Factor
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    ABSTRACT: NdLiP4O12 crystals can be used for low-threshold, miniature laser. A double waveguide structure in a NdLiP4O12 laser crystal formed by ion implantation is for the first time reported. Double waveguide in NdLiP4O12 laser crystal is formed with 2.8 and 1.8MeV He ions to the same dose of 1.5×1016 He ions/cm2. The refractive index distribution of the double waveguide in the NdLiP4O12 laser crystal is given based on the reflectivity calculation method.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2005; 227(3):271-274. · 1.27 Impact Factor
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    ABSTRACT: Low-energy 120 and 150 keV H+ was implanted in z-cut LiNbO3 at room temperature. The fluence of H+ is 5x10(16) ions/cm(2) . The damage profiles in LiNbO3 induced by implantation were investigated using Rutherford backscattering/channelling. The damage profiles were extracted using the channelling results. The experimental damage profiles in LiNbO3 were analyzed and compared to the simulated results from TRIM. The results show a good consistency between experimental and simulated results. The present results are useful for the fabrication of H-implanted waveguides of oxide crystals, especially LiNbO3 .
    Radiation Effects and Defects in Solids 01/2004; 159(5):309-314. · 0.50 Impact Factor
  • Source
    Fei Lu, Hui Hu, A. Rizzi
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    ABSTRACT: AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5×1014, 1.5×1015, 3×1015 and 6×1015 ions/cm2, respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 °C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution.
    Applied Surface Science 01/2003; 205:262-266. · 2.54 Impact Factor
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    ABSTRACT: LiB3O5 crystals were irradiated with MeV He+ ions of different fluences and energies. The refractive index profiles, nx, ny, and nz in LiB3O5 waveguides are given. The results show that: (1) the thickness of the ion irradiated waveguides can be estimated by the mean projected range of irradiated ions, and the refractive index changes in ion irradiated waveguides are mainly caused by nuclear collisions; (2) after annealing at 200 °C for 40 min., the height of the optical barrier in the LiB3O5 waveguide is decreased; (3) the attenuation measured is 0.87 dB/cm for m=0 in the LiB3O5 waveguide irradiated with 2.8 MeV He+ to 5×1016 ions/cm2; and (4) it is possible to make double waveguides in LiB3O5 by MeV He+ ion irradiation. © 2002 American Institute of Physics.
    Journal of Applied Physics 09/2002; 92(7):3551-3553. · 2.21 Impact Factor
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    ABSTRACT: The first MeV copper and nickel ion implanted waveguides in Nd:NaY(WO4)2 are reported. The planar optical waveguides were formed in this crystal by 2.8 MeV Cu+ or Ni+ ion implantation with doses of 1–3×1015 ions/cm2 at room temperature, respectively. The dark modes were observed by prism coupling method. The reflectivity calculation method was used to analyze the refractive index profiles of the waveguides.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 04/2002; 187(4):475-478. · 1.27 Impact Factor
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    ABSTRACT: High quality BaTiO3 optical-waveguide thin films on MgO(100) substrate were fabricated successfully by using pulsed laser deposition technique. The properties of the samples were characterized by using Rutherford backscattering (RBS), X-ray diffraction, atomic force microscopy and prism coupling method. The RBS shows no obvious evidence for interdiffusion between the film and the substrate. The thickness of the film and the Ba/Ti ratio were calculated based on RBS to be 881 nm and 1.004, respectively. X-ray diffraction results show that the as-deposited BaTiO3 film is basically oriented polycrystalline, and strong (l00) peaks were revealed. The root mean square (rms) roughness of the film was evaluated to be 0.796 nm, this is only 0.1% of the film thickness. The bright TE (m=0,1,2,3) and TM (m=0,1,2,3) modes in the BaTiO3 film optical waveguide were observed.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2002; 191(1):778-782. · 1.27 Impact Factor
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    ABSTRACT: 2.0 MeV Au+ ions were implanted into different Si substrates with a fluence of 2× 1015 ions/cm2 at room temperature with different angles of incidence. Tested Si substrates are amorphized Si, amorphous Si film and crystal Si. The mean projected range, range straggling and lateral spread have been studied by Rutherford backscattering (RBS). The results show that (1) the experimental mean projected range is larger than the value predicted by TRIM (transport of ions in matter) by around 20%; (2) the experimental range straggling and lateral spread deviate significantly from the TRIM predictions; (3) after the correlation between nuclear and electronic stopping is included, the agreement between experimental and calculated values is markedly improved.
    Japanese Journal of Applied Physics 01/2002; 41:918-921. · 1.07 Impact Factor
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    ABSTRACT: The 400keV Er and Nd ions were implanted into Si1N1.375H0.603, each kind of ions were performed at 0 and 60° incident angles, respectively. The mean projected ranges as well as range straggling and lateral spread of implanted ions were studied by using Rutherford backscattering (RBS) of 2.1MeV He ions. The obtained experimental values were compared with the calculated values by TRIM’96. The results show that ranges are in good agreement with each other; for range straggling and lateral spreads the maximum difference between the experimental and calculated values are 22 and 21%, respectively.
    Applied Surface Science 01/2002; 195(1):48-52. · 2.54 Impact Factor
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    ABSTRACT: KTiOPO4 samples were implanted by Bi+ ions with energies from 100 to 350 keV in increments of 50 keV. The depth distribution and diffusion behavior of implanted Bi+ into KTiOPO4 were investigated by normal and oblique incidence Rutherford backscattering. The results show that the maximum difference between experimental and calculated values of the mean projected range is less than 22% the experimental range straggling somewhat deviates from the prediction by TRIM'98. After annealing, the redistributions of implanted Bi+ ions in KTiOPO4 do not obey Fick's law, and there is a segregation process to the surface for 700 °C annealing. After 800 °C annealing for 30 min, most of the segregated Bi+ ions had evaporated, and the distribution of the remaining Bi+ ions became flat.
    Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 01/2002; 20:362-365. · 1.43 Impact Factor
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    ABSTRACT: YCa4O(BO3)3 (YCOB) is one of the rare-earth calcium oxyborate family of crystals. The crystal has good potential to be used for self-frequency doubling due to its excellent combination of nonlinear and laser properties. We have used MeV He+ ions to make waveguides in YCOB and Nd:YCOB (NdYCOB) crystals. The ion implantation was carried out with 2.8 MeV He+ ions at room temperature. The fluences have varied from 1.5×1016 to 5.5×1016 ions/cm2. The model 2010 prism coupler was used to measure the modes in YCOB and NdYCOB waveguides formed by MeV He+ ion implantation. The refractive index profiles are fitted based on the reflectivity calculation method. We have used TRIM'98 simulation to get the range and damage profiles by MeV He+ ions in YCOB. Especially the refractive index change as a function of fluence is discussed.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2002; 191(1):789-793. · 1.27 Impact Factor
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    ABSTRACT: Pb+ ions have been implanted into LiNbO3 crystals in the energy range of 100-350 keV at doses of 5×1015, 1×1016 and 2×1016 ions/cm2. The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98 and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350 keV Pb+ implanted into LiNbO3 crystals. After 800°C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb+ ions at 150 keV with a dose of 5×1015 ions/cm2. After a low-temperature treatment at 77 K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb+ ions in LiNbO3.
    Chinese Physics Letters 01/2002; 19(1):101-104. · 0.92 Impact Factor
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    ABSTRACT: The X-cut, Y-propagation LiNbO3 crystals were implanted by 2.8 MeV P+ ions with doses of ∼1 × 1014 ions/cm2 at room temperature. Planar optical waveguides were formed by P+ implantation at doses of 1 × 1014, 2 × 1014, 3 × 1014 and 4 × 1014 ions/cm2. Contrary to high-dose ion-implanted waveguides, the extraordinary refractive index was found to increase in the guide region for implantation with low doses by the dark mode. When the light beam was coupled to the LiNbO3 waveguide which was formed by MeV P+ implantation at a dose of 1 × 1014 ions/cm2 and a following annealing at 200 °C for 30 min in air, obvious light was found propagating through the entire length of the waveguide, and Rutherford Backscattering (RBS)/channeling technique was used to characterize the lattice reconstruction of LiNbO3 crystals after the annealing treatment.
    physica status solidi (a) 10/2001; 187(2):543 - 548. · 1.21 Impact Factor
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    ABSTRACT: Lithium tantalate (LiTaO3) samples were implanted with H+ ions at different energies from 250 to 350 keV using different doses. Lithium triborate (LiB3O5) samples were implanted at 350 keV H+ ions with doses from 1×1016 to 5×1016 ions/cm2 in increment of 1×1016 ions/cm2 at room temperature. The modes in LiTaO3 and LiB3O5 samples were measured by a model 2010 prism coupler. Two or three modes were observed in most cases. The change of the refractive index depends on the energy, dose and annealing temperature. Multi-energy implantation was used to broaden the optical barrier. There is a threshold dose of around 4×1016 ions/cm2 for LiB3O5 which is different from the case of LiTaO3. The preliminary results show that the waveguide formation in LiTaO3 and LiB3O5 crystals is possible by using keV H+ ion implantation.
    Optics Communications 09/2001; 196:215-219. · 1.44 Impact Factor
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    ABSTRACT: The monomode enhanced-index LiNbO <sub>3</sub> waveguide fabricated by low-dose ion implantation is reported. LiNbO <sub>3</sub> crystals were implanted with 3 MeV Si <sup>+</sup> ions to doses around 10 <sup>14</sup>  ions/cm <sup>2</sup>. After annealing, the waveguides were formed by the extraordinary refractive index enhancement in the waveguide regions. The effective extraordinary refractive index of the waveguide increased with ion implantation dose. The loss was 0.64 dB/cm in the X-cut sample with an implantation dose of 3.3×10 <sup>14</sup>  ions/cm <sup>2</sup>. The scattering loss in the Z-cut samples was even lower than that in the X-cut samples. © 2001 American Institute of Physics.
    Journal of Applied Physics 06/2001; · 2.21 Impact Factor
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    ABSTRACT: Er-doped KTiOPO4 films on different substrates were made by pulsed-laser deposition. Substrates included Al2O3, MgO, and KTiOPO4. Both KTiOPO4 and erbium were used as targets. The composition of the Er-doped KTiOPO4 films on the different substrates was analyzed by Rutherford backscattering with 2.1 MeV He2+. The results show that there is deficiency of K and P in the deposited KTiOPO4 film on the different substrates. The prism coupling method was used to determine the relative intensity of scattered light versus the effective refractive index. The measurement indicates that there are waveguide structures in all cases. © 2001 American Vacuum Society.
    Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 03/2001; 19(2):394-397. · 1.43 Impact Factor
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    ABSTRACT: Two LiNbO3 (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 1014 ions/cm2 and 3.5 × 1014 ions/cm2 with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO3 sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 1016 ions/cm2. The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO3. The results show: (1) the damage in LiNbO3 created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO3 crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO3 after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO3.
    Radiation Effects and Defects in Solids 02/2001; 153(3):271-279. · 0.50 Impact Factor
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    ABSTRACT: Planar waveguides were first formed in thulium sodium yttrium tungstate (Tm:NaY(WO4)2) crystals by the implantation of MeV He, P and Ni ions with certain doses at room temperature, respectively. The refractive index profiles of the three ion implanted waveguides were found different to some extent. The present data show that He+ ion implanted waveguides in Tm:NaY(WO4)2 should be the typical barrier type one, while a combination of radiation damage and radiation enhanced diffusion may be responsible for the refractive index profiles of the MeV Ni+ and P+ ion implanted waveguides in Tm:NaY(WO4)2.
    Optics Communications 01/2001; · 1.44 Impact Factor
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    ABSTRACT: The first planar optical waveguide was formed in neodymium sodium yttrium tungstate (Nd:NaY(WO4)2) crystal by 2.6 MeV He+ ion implantation at a dose of at room temperature. The dark modes were measured using the prism-coupling method. The refractive index profiles were analyzed using the reflectivity calculation method (RCM). TRIM’98 (transport of ions in matter) code was used to simulate the damage profile in Nd:NaY(WO4)2 by 2.6 MeV He+ ion implantation. The fluorescence spectrum of the sample was measured.
    Applied Surface Science 01/2001; · 2.54 Impact Factor

Publication Stats

150 Citations
57.19 Total Impact Points

Institutions

  • 2000–2005
    • Shandong University
      • • School of Physics and Microelectronics
      • • Department of Physics
      Jinan, Shandong Sheng, China
    • Universität Osnabrück
      Osnabrück, Lower Saxony, Germany
  • 2000–2001
    • Peking University
      • Department of Technical Physics
      Beijing, Beijing Shi, China