Ze Yuan

Publications (2)3.59 Total impact

• Article: Strained germanium thin film membrane on silicon substrate for optoelectronics.

  Donguk Nam, Devanand Sukhdeo, Arunanshu Roy, Krishna Balram, Szu-Lin Cheng, Kevin Chih-Yao Huang, Ze Yuan, Mark Brongersma, Yoshio Nishi, David Miller, Krishna Saraswat
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  ABSTRACT: This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.
  Optics Express 12/2011; 19(27):25866-72. · 3.59 Impact Factor
• Conference Proceeding: Optimal design of IIItextendashV heterostructure MOSFETs

  Aneesh Nainani, Ze Yuan, Tejas Krishnamohan, Krishna Saraswat
  2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)2010 International Conference on Simulation of Semiconductor Processes and Devices;