Publications (2)17.46 Total impact
-
Article: Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection.
[show abstract] [hide abstract]
ABSTRACT: Cone-shaped nanostructures with controllable side-wall angle are success- fully fabricated with a SiO(2) nanosphere lithography (NSL) etching mask. Vertical LEDs with cone-shaped nanostructures with a 24.1° side-wall angle provide 6% more light output power compared to those using hexagonal pyramids formed by photochemical etching. This achievement is attributed to effective elimination of total internal reflection by angle-controlled nanostructures.Advanced Materials 03/2012; 24(17):2259-62. · 13.88 Impact Factor -
Article: Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading.
[show abstract] [hide abstract]
ABSTRACT: We present the enhancement of wall-plug efficiency in vertical InGaN/GaN light-emitting diodes (V-LEDs) by improved current spreading with a novel Al2O3 current blocking layer (CBL). The Al2O3 CBL deposited by electron-beam evaporation shows high transmittance and good corrosion resistance to acidic solutions. V-LEDs with an Al2O3 CBL show similar light output power but lower forward voltage as compared to those with a SiO2 CBL deposited by plasma-enhanced chemical vapor deposition. As a result, the wall-plug efficiency of V-LEDs with an Al2O3 CBL at 500 mA was improved by 5% as compared to those with a SiO2 CBL, and by 19% as compared to those without a CBL.Optics Express 03/2012; 20 Suppl 2:A287-92. · 3.59 Impact Factor
Top co-authors
Top Journals
- Optics Express (1)
- Advanced Materials (1)
Institutions
-
2012
-
Pohang University of Science and Technology
- Department of Materials Science and Engineering
Andong, North Gyeongsang, South Korea
-
