[show abstract][hide abstract] ABSTRACT: Our recent studies on metal-organic nanohybrids based on alkylated graphene oxide (GO), reduced alkylated graphene oxide (RGO) and InP/ZnS core/shell quantum dots (QDs) are presented. The GO alkylated by octadecylamine (ODA) and the QD bearing a dodecane thiol (DDT) ligand are soluble in toluene. The nanocomposite alkylated-GO-QD (GOQD) is readily formed from the solution mixture. Treatment of the GOQD composite with hydrazine affords a reduced-alkylated-GO-QD (RGOQD) composite. The structure, morphology, photophysical and electrical properties of GOQDs and RGOQDs are studied. The micro-FTIR and Raman studies demonstrate evidence of the QD interaction with GO and RGO through facile intercalation of the alkyl chains. The field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) images of the GOQD composite show heaps of large QD aggregates piled underneath the GO sheet. Upon reduction to RGOQDs, the QDs become evenly distributed on the graphene bed and the size of the clusters significantly decreases. This also facilitates closer proximity of the QDs to the graphene domains by altering the optoelectronic properties of the RGOQDs. The X-ray photoelectron spectroscopy (XPS) results confirm QDs being retained in the composites, though a small elemental composition change takes place. The XPS and the fluorescence spectra show the presence of an In(Zn)P alloy while the X-ray diffraction (XRD) results show characteristics of the tetragonal indium. The photoluminescence (PL) quenching of QDs in GOQD and RGOQD films determined by the time correlated single photon counting (TCSPC) experiment demonstrates almost complete fluorescence quenching in RGOQDs. The conductance studies demonstrate the differences between GOQDs and RGOQDs. Investigation on the metal-oxide-semiconductor field-effect transistor (nMOSFET) characteristics shows the composite to exhibit p-type channel material properties. The RGOQD exhibits much superior electrical conductance as a channel material compared to the GOQD due to the close proximity of the QDs in the RGOQD to the graphene surface. The transfer characteristics, memory properties, and on/off ratios of the devices are determined. A mechanism has been proposed with reference to the Fermi energies of the composites estimated from the ultraviolet photoelectron spectroscopy (UPS) studies.
[show abstract][hide abstract] ABSTRACT: The performance of a polymer photovoltaic device using multilayered graphene on an amorphous PET substrate as the electrode was studied. The changes in surface morphology of graphene coated polyethylene terephthalate (PETG) substrate upon thermal annealing were investigated by atomic force microscopy (AFM), field emission scanning electron microscope (FE-SEM) and current-voltage characteristics. The root mean square (RMS) roughness of PETG substrate before annealing was 36.5 nm that decreased to 11.5 nm after 10 min thermal annealing at 110 degrees C. The mean grain size of the substrate decreased from 2301 nm2 to 848 nm2. The PETG surface became smooth when thermally annealed as the voids created by the bubbles in the graphene layer were filled up with thermal expansion of the PET substrate. However, cracks present initially on the graphene due to surface stress between the graphene and PET layer grew further upon annealing that deteriorated the device performance. This study on the graphene surface morphology change upon annealing and the consequent drop in device performance vis-à-vis an ITO glass electrode shows potential drawback of solar cell device fabrication on such flexible substrates.
Journal of Nanoscience and Nanotechnology 11/2011; 11(11):10069-77. · 1.15 Impact Factor