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ABSTRACT: In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f<sub>T</sub> SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.
IEEE Journal of Solid-State Circuits 11/2004; · 3.23 Impact Factor
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J. Bock,
H. Schafer, K. Aufinger,
R. Stengl,
S. Boguth,
R. Schreiter,
M. Rest,
H. Knapp,
M. Wurzer,
W. Perndl,
T. Bottner,
T.F. Meister
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ABSTRACT: A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting; 10/2004
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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting; 10/2004
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ABSTRACT: We present a static frequency divider with a divide ratio of 16. The circuit is realized in current-mode logic (CML) and operates up to a maximum frequency of 62 GHz. The first master-slave flip-flop uses shunt peaking and consumes only 4 mW from a 2 V supply. The total supply current including all four divider stages and buffers is 12 mA. The circuit is manufactured in a 200-GHz f<sub>T</sub> SiGe bipolar process.
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on; 10/2004
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T.F. Meister,
H. Knapp,
H. Schafer, K. Aufinger,
R. Stengl,
S. Boguth,
R. Schreiter,
M. Rest,
W. Perndl,
M. Wurzer,
T. Bottner,
J. Bock
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ABSTRACT: A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency divider, a 86 GHz static frequency divider, a 52 GHz dual modulus 256/257 prescaler and a 98 GHz VCO state of the art high frequency circuits could be realized in this SiGe technology.
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on; 10/2004
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ABSTRACT: An active down-conversion mixer for automotive radar applications at 76 GHz to 81 GHz was realized in a 200 GHz f<sub>T</sub> SiGe bipolar technology. A conversion gain of more than 24 dB and a single-sideband noise figure of less than 14 dB is achieved. The 1 dB output compression point is -4 dBm. The power consumption is 300 mW at -5 V supply voltage.
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE; 07/2004
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ABSTRACT: In this paper two fully integrated voltage controlled oscillators (VCOs) in a 200GHz f<sub>T</sub> SiGe bipolar technology are presented. The oscillators use on-chip transmission lines in their resonators and at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -97 dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 GHz to 98.4 GHz and it consumes 12mA from a single -5 V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -98 dBc/Hz at 1 MHz offset frequency. These oscillation frequencies are the highest reported so far for fundamental-mode oscillators in silicon-based technologies.
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the; 10/2003
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T.F. Meister,
H. Schafer, K. Aufinger,
R. Stengl,
S. Boguth,
R. Schreiter,
M. Rest,
H. Knapp,
M. Wurzer,
A. Mitchell,
T. Bottner,
J. Bock
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ABSTRACT: A SiGe bipolar technology for future high frequency applications is presented. A cut-off frequency of 206 GHz and a maximum oscillation frequency of 197 GHz combined with a gate delay of 3.9 ps have been obtained. With a 86 GHz static frequency divider and a 110 GHz dynamic frequency divider state of the art high-speed circuits are achieved.
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the; 10/2003
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ABSTRACT: We present static and dynamic frequency dividers manufactured in a 200 GHz f<sub>T</sub> SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.
Microwave Symposium Digest, 2003 IEEE MTT-S International; 07/2003
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ABSTRACT: Monolithic integrated lumped planar transformers were introduced more than ten years ago. We present a comprehensive review Monolithic integrated lumped planar transformers were introduced more than ten years ago. We present a comprehensive review
of the electrical characteristics which results in an accurate lumped low-order equivalent model. Amplifiers, mixers and Meissner-type of the electrical characteristics which results in an accurate lumped low-order equivalent model. Amplifiers, mixers and Meissner-type
voltage controlled oscillators using monolithic transformers have been published a few years ago. For the first time, integrated voltage controlled oscillators using monolithic transformers have been published a few years ago. For the first time, integrated
transformer-coupled power amplifiers with a high performance up to 2 GHz are demonstrated. This presentation gives an introduction transformer-coupled power amplifiers with a high performance up to 2 GHz are demonstrated. This presentation gives an introduction
into monolithic transformer and circuit design of push-pull type power amplifiers. Two designs were realized: into monolithic transformer and circuit design of push-pull type power amplifiers. Two designs were realized:
1. 1.
A monolithic 2.5 V, 1 W Si-bipolar power amplifier with 55% power-added efficiency at 1.9 GHz. A monolithic 2.5 V, 1 W Si-bipolar power amplifier with 55% power-added efficiency at 1.9 GHz.
2. 2.
A monolithic 2.8 V, 3.2 W Si-bipolar power amplifier with 54% power-added efficiency at 900 MHz. A monolithic 2.8 V, 3.2 W Si-bipolar power amplifier with 54% power-added efficiency at 900 MHz.
12/2002: pages 347-371;
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ABSTRACT: Presents a dual-modulus prescaler with divide ratios of 256 and
257. The circuit uses static divider stages and differential
current-mode logic. AND-gates are merged with flip-flops to achieve high
operating frequencies at low power consumption. The prescaler operates
with input frequencies ranging from below 1 GHz up to 36.4 GHz. It
consumes 34.2 mA from a 3 V supply. The circuit is manufactured in a 0.4
μm SiGe bipolar technology
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE; 02/2002
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ABSTRACT: This paper presents an integrated circuit suitable for frequency synthesis. The circuit consists of a monolithic voltage-controlled oscillator operating up to 30.5 GHz with static divide-by-256/divide-by-257 dual-modulus prescaler and consumes 500 mW from the 5.3 V supply. It is manufactured in a pre-production 0.4 μm/85 GHz SiGe bipolar technology.
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002; 02/2002
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ABSTRACT: A pseudo-random bit sequence (PRBS) generator with a sequence length of 2<sup>7</sup>-1 is presented. The circuit is based on a linear feedback shift register operating at half the output data rate. It is manufactured in a pre-production SiGe bipolar technology with a cut-off frequency f<sub>T</sub> of 106 GHz. The PRBS generator operates up to a maximum data rate of 40 Gbit/s and consumes 265 mA from a -4.5 V supply.
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002; 02/2002
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ABSTRACT: A 2:1 static frequency divider fabricated in a 0.35 μm SiGe bipolar technology is described. It operates up to 71.8 GHz and draws 132 mA from a single 4.5 V supply. Continuous operation up to the maximum operating frequency of 71.8 GHz has been demonstrated. This operating frequency is the highest achieved for this type of circuit in Si-based technologies and comparable with the fastest static dividers realized in III-V technologies.
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002; 02/2002
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J. Bock,
H. Schafer,
H. Knapp,
D. Zoschg, K. Aufinger,
M. Wurzer,
S. Boguth,
M. Rest,
R. Schreiter,
R. Stengl,
T.F. Meister
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ABSTRACT: A SiGe bipolar technology for mixed digital and analog RF applications is presented. Balanced device performance is achieved with a transit frequency f<sub>T</sub> of 155 GHz at a collector emitter breakdown voltage BV<sub>CEO</sub> of 1.9 V, a maximum oscillation frequency f<sub>max</sub> of 167 GHz, and 4.7 ps ring oscillator gate delay. With a 99 GHz dynamic frequency divider and a 19 GHz LNA with 2.2 dB noise figure state-of-the-art results for high-speed digital and analog applications are demonstrated.
Electron Devices Meeting, 2002. IEDM '02. International; 02/2002
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ABSTRACT: A 0.4 μm silicon bipolar technology for mixed digital/analog
RF-applications is described. Without increasing the process complexity
in comparison to current production technologies transit frequencies of
52 GHz, maximum oscillation frequencies of 65 GHz and minimum noise
figures of 0.7 and 1.3 dB at 3 and 6 GHz are achieved. Emitter-coupled
logic (ECL) ring oscillators have a minimum gate delay of 12 ps, the low
power capability of the technology is proven by a current-mode logic
(CML) power delay product of 5.2 fJ and a dynamic frequency divider
operates up to 52 GHz. These results demonstrate the suitability of this
technology for mobile communications up to at least 6 GHz and for
high-speed optical data links at 10 Gbit/s and above
IEEE Transactions on Electron Devices 12/2001; · 2.32 Impact Factor
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ABSTRACT: Two dual-modulus prescalers manufactured in a low-cost silicon
bipolar technology are presented. The first circuit is optimized for low
power consumption and operates up to 2 GHz at a power consumption of 2
mW. The second prescaler is optimized for high speed and operates up to
12 GHz with a power consumption of 30 mW. The prescalers have selectable
divide ratios of 128/129 and 256/257, respectively
IEEE Journal of Solid-State Circuits 10/2001; · 3.23 Impact Factor
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ABSTRACT: A monolithically integrated active broadband mixer for wireless
communications in a 0.5 μm 80 GHz f<sub>T</sub> SiGe bipolar
technology is presented. The circuit is optimised for low-noise and
low-power consumption and operates up to 20 GHz with a conversion gain
>10 dB consuming only 9 mW from a single 4.5 V supply
Electronics Letters 02/2001; · 0.96 Impact Factor
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Low Power IC Design (Ref. No. 2001/042), IEE Seminar on; 02/2001
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ABSTRACT: We present a wideband amplifier with 12 dB gain and a 3-dB
bandwidth of 15 GHz. The noise figure is 2.8 dB for frequencies up to 10
GHz and 4 dB at 15 GHz. The circuit is manufactured in an advanced SiGe
bipolar technology and consumes 7.2 mA from a 3.3 V supply
Microwave Symposium Digest, 2001 IEEE MTT-S International; 02/2001
