Publications (4)0 Total impact
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Article: SiGe heterojunction bipolar phototransistor for optics–microwaves interfacing
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ABSTRACT: A new SiGe heterojunction bipolar phototransistor (HPT) based on a commercially available process was designed, realized, and experimentally characterized. Its internal characteristics, mainly the collector-to-base capacitance, vary significantly with the received light power, making it suitable as an active element of a light-controlled photo-oscillator. It can also be a key component of optical network-on-chip (ONoC). Its responsivity was improved and its transition frequency remains in the range of 30 GHz.International Journal of Microwave and Wireless Technologies 11/2011; 3(06):633 - 636. -
Conference Proceeding: Study and modeling of a new configuration of an optical network on chip (ONOC) using FDTD.
Proceedings of the 6th International Workshop on Reconfigurable Communication-centric Systems-on-Chip, ReCoSoC 2011, Montpellier, France, 20-22 June, 2011; 01/2011 -
Conference Proceeding: Toward All Optical Interconnections in Chip Multiprocessor (2).
2011 International Conference on Reconfigurable Computing and FPGAs, ReConFig 2011, Cancun, Mexico, November 30 - December 2, 2011; 01/2011 -
Conference Proceeding: Improved RF CMOS active inductor with high self resonant frequency.
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ABSTRACT: Many architectures of transistor only simulated inductors (TOSI) have been proposed until now in literature. Exhibiting tuning possibilities, low chip area and offering integration facility, they constitute promising architectures to replace passive inductors in RF circuits. An improved CMOS active inductor topology is proposed in this paper. With a novel loss compensation scheme, frequency increase up to 1.1 GHz (30%-66%) of the inductor self resonant frequency is achieved in the frequency band 1.5-3.3 GHz with large quality factors and very low current consumption. Besides, a more accurate passive model is proposed for CMOS TOSI active inductors and tested for this particular topology. Consisting of four parallel branches, it is still second order even though it contains three conservative elements. The model is sufficient general and proves superior performances over the classical RLC model mainly for higher frequencies. The simulations were carried out in a 0.18 um CMOS process.17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, Athens, Greece, 12-15 December, 2010; 01/2010
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2010
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Universitatea Tehnica Gheorghe Asachi din Iasi
Iaşi, Judetul Iasi, Romania
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