Publications (1)0 Total impact
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Conference Proceeding: A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology.
IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011; 01/2011
