Jin-Ho Shin

Pohang University of Science and Technology, Antō, North Gyeongsang, South Korea

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Publications (3)2.79 Total impact

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    ABSTRACT: We have investigated the surface recombination and its 1/f noise properties of AlGaAs/GaAs HBT's as a function of the emitter-base structure and the surface passivation condition. It is found that the surface recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% Al mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm<sup>2</sup>. The dominant noise source of the HBT is not a surface recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor devices, and comparable to those of low-noise Si BJTs
    Microwave Symposium Digest, 1997., IEEE MTT-S International; 07/1997
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    ABSTRACT: The first quantitative extraction of low-frequency noise equivalent circuit model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor has been performed. It is based on a generalized small signal circuit model including the base and emitter series resistance noise sources. The dominant noise sources are emitter-base current noise source and the resistance noise source. The emitter-collector current noise source is negligible
    Microwave Symposium Digest, 1996., IEEE MTT-S International; 07/1996
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    ABSTRACT: To reduce the low-frequency noise, HBTs with a large emitter size of 120/spl times/120 /spl mu/m/sup 2/ are fabricated on abrupt emitter-base junction materials without undoped spacer. The HBTs exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBTs. From the very low noise HBTs, the existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with different base terminations. It is found that, at a high emitter-base forward bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. Device design rules for low noise small-feature size HBT, including resistance fluctuation, are discussed.
    IEEE Electron Device Letters 03/1996; · 2.79 Impact Factor

Publication Stats

9 Citations
2.79 Total Impact Points

Institutions

  • 1996
    • Pohang University of Science and Technology
      • Department of Electronic and Electrical Engineering
      Antō, North Gyeongsang, South Korea