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International Symposium on Circuits and Systems (ISCAS 2011), May 15-19 2011, Rio de Janeiro, Brazil; 01/2011
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Proceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, Sept. 12-16, 2011; 01/2011
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20th European Conference on Circuit Theory and Design, ECCTD 2011, Linkoping, Sweden, Aug. 29-31, 2011; 01/2011
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20th European Conference on Circuit Theory and Design, ECCTD 2011, Linkoping, Sweden, Aug. 29-31, 2011; 01/2011
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ABSTRACT: Concept, theoretical analysis, and experimental results obtained from a charge-injection photogate (CI-PG) pixel detector fabricated in CMOS silicon-on-insulator (SOI) technology are presented. The charge collected in the photodetector during a certain charge collection (integration) time is injected into the substrate for readout. This readout principle presents a huge internal photocurrent amplification (∼104) taking place in the photodetector, obtained through the ‘time-compression’ approach. Here, the readout circuitry is fabricated on highly doped, 200 nm thick, SOI film, while the photogate detector is fabricated on higher resistivity handle-wafer. The latter, together with the 30 V biasing possibilities, enhances the quantum efficiency of the pixel, especially for irradiations with wavelengths in the near-infra-red part of the spectra. Copyright © 2008 John Wiley & Sons, Ltd.
International Journal of Circuit Theory and Applications 02/2009; 37(2):179 - 192. · 1.63 Impact Factor
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01/2003
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01/2002
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ABSTRACT: A 3rd order active lowpass filter for antialiasing and smoothing applications, which is based on distributed RC elements, is presented together with a procedure for optimum design of this type of filter. When compared to filters using lumped resistors and capacitors, distributed filters offer steeper stopband roll-off, higher crosstalk insensitivity, and require smaller chip area.
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European; 10/1995
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01/1994
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ABSTRACT: A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a permalloy magnetoresistive microbridge acting as sensor, temperature compensation circuitry, readout electronics, reference voltage bias, and clock generation.
Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European; 10/1993
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ABSTRACT: A bandgap reference circuit which operates at supply voltages down to 1.2V is presented. It offers a reference voltage of 82mV and a reference current of 2¿A with a temperature dependence of less then 100ppm/K in a temperature range form ¿40°C to 120°C. The power supply rejection is enhanced by self biasing the circuit with the reference current. The circuit has been fabricated in a standard 1.5¿m CMOS process.
Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European; 10/1993
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ABSTRACT: In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35 μm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. “Buried" MOS capacitor-based collection-gate, a transfer-gate, and an n-type MOSFET source/drain n+ floating-diffusion serve to realize a non-destructive readout. The pixel readout is performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double-sampling. The concentration gradient formed in the n-well employs a single extra implantation step in the 0.35 μm CMOS process mentioned and requires only a single extra mask. It generates an electrostatic potential gradient, i.e. a lateral drift-field, in the photoactive area of the pixel which enables high charge transfer speed and low image-lag. According to the simulation results presented, charge transfer times of less than 3 ns are to be expected.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
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ABSTRACT: In this paper a novel variable gain common-gate LNA is presented, which features adaptive gain dependent bias current. The CG-LNA is designed in a 0.25 µm CMOS technology and consumes only 831 µA in maximum gain mode. The current consumption can be reduced further by factor 7 in the minimum gain mode.
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ABSTRACT: Current-mode-logic circuits play an important role in the design of CMOS frequency synthesizers for modern wire-less digital communication systems. They provide the build-ing blocks for frequency dividers with input frequencies in the range of the desired carrier frequencies. In this commu-nication we estimate the upper limit frequency as a function of the gate length using voltage swing considerations.
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ABSTRACT: In this work, theoretical modeling and simulations of a ‘time compression’ parametric amplification pixel array to be used in CMOS imaging for low-level or near IR radiation are presented. The implementation in the higher resistivity substrate process used for smart-power devices, namely the 30 V thin-film 1.0 μm SIMOX-CMOS based on Silicon-on-Insulator technology, enables isolated separation of photoactive and readout circuitry areas when integrated on the same chip. The method presented shows that very high readout current peaks can be generated which are much higher than the mean value of the photocurrent induced. Thus, the parametrically amplified readout signals can be detected by a low-noise peak-detector circuit. The 500×500 μm2 area pixels with internal parametrically controllable amplification and increased pixel fill-in factor (>90%) present higher detection volume due to enlarged deep-depletion region depth caused by a low resistivity substrate. Moreover, the X–Y addressing and the inverse exponential dependence of the parametric amplification on the incoming radiant flux for each pixel provide separately controllable single-pixel internal amplification which improves the intra-scene high dynamic range demands.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
