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ABSTRACT: The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.
Journal of Micromechanics and Microengineering 03/2010; 20(5):055005. · 2.11 Impact Factor
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Geert Van der Plas, Steven Thijs,
Dimitri Linten,
Guruprasad Katti,
Paresh Limaye,
Abdelkarim Mercha,
Michele Stucchi,
Herman Oprins,
Bart Vandevelde,
Nikolaos Minas,
Miro Cupac,
Morin Dehan,
Marc Nelis,
Rahul Agarwal,
Wim Dehaene,
Youssef Travaly,
Eric Beyne,
Paul Marchal
IEEE Custom Integrated Circuits Conference, CICC 2010, San Jose, California, USA, 19-22 September, 2010, Proceedings; 01/2010
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Geert Van der Plas,
Paresh Limaye,
Abdelkarim Mercha,
Herman Oprins,
Cristina Torregiani, Steven Thijs,
Dimitri Linten,
Michele Stucchi,
Guruprasad Katti,
Dimitrios Velenis, [......],
Ann Opdebeeck,
Michal Rakowski,
Bart De Wachter,
Morin Dehan,
Marc Nelis,
Rahul Agarwal,
Wim Dehaene,
Youssef Travaly,
Pol Marchal,
Eric Beyne
IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010; 01/2010
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IEEE T. Instrumentation and Measurement. 01/2009; 58:3418-3426.
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ABSTRACT: A novel “plug-and-play” ESD protection methodology for wideband RF applications is demonstrated. This methodology, referred to as T-diodes, utilizes an integrated transformer together with classical ESD protection diodes. The T-diodes act as an artificial transmission line that, when placed as a “plug-and-play” ESD protection component in front of an unprotected wideband LNA, preserves the input matching of that LNA. As a demonstrator, a wideband RF LNA in 0.18 μm CMOS is protected above 4.5 kV HBM ESD robustness without degrading its bandwidth.
Microelectronics Reliability. 01/2009; 49:1440-1446.
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Microelectronics Reliability. 01/2007; 47:1016-1024.
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Microelectronics Reliability. 01/2006; 46:702-712.
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Microelectronics Reliability. 01/2003; 43:1011-1020.