Yves Scudeller

Institut des Materiaux Jean Rouxel, Naoned, Pays de la Loire, France

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Publications (66)96.39 Total impact

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    ABSTRACT: The thermal insulation behavior of ordered mesoporous silica SBA-15 aggregates heat treated at 300 ∘C was studied. An important decrease in the effective thermal conductivity according to the increase of the apparent density was observed. A thermal conductivity value less than 25 mW.m−1.K−1 was reached during the compaction phenomenon. Results of thermal conductivity were correlated to the electron microscopy observations and physicochemical data (X-ray diffraction, adsorption/desorption of nitrogen volumetric measurements). These thermal properties make these materials very promising for thermal insulation applications, especially with values inferior to the thermal conductivity of air.
    The European Physical Journal Special Topics 07/2015; 224(9):1775-1785. DOI:10.1140/epjst/e2015-02498-3 · 1.40 Impact Factor
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    ABSTRACT: The thermal conductivity of polyimide/boron nitride (PI/BN) nanocomposite thin films has been studied for two sizes of BN nanofillers (40 and 120 nm) and for a wide range of content. A strong influence of BN particle size on the thermal conduction of PI has been identified. In the case of the largest nanoparticles (hexagonal-BN), the thermal conductivity of PI/h-BN (120 nm) increases from 0.21 W/mK (neat PI) up to 0.56 W/mK for 29.2 vol %. For the smaller nanoparticles (wurtzite-BN), PI/w-BN (40 nm), we observed two different behaviors. First, we see a decrease until 0.12 W/mK for 20 vol % before increasing for higher filler content. The initial phenomenon can be explained by the Kapitza theory describing the presence of an interfacial thermal resistance barrier between the nanoparticles and the polymer matrix. This is induced by the reduction in size of the nanoparticles. Modeling of the experimental results allowed us to determine the Kapitza radius aK for both PI/h-BN and PI/w-BN nanocomposites. Values of aK of 7 nm and >500 nm have been obtained for PI/h-BN and PI/w-BN nanocomposite films, respectively. The value obtained matches the Kapitza theory, particularly for PI/w-BN, for which the thermal conductivity is expected to decrease compared to that of neat PI. The present work shows that it seems difficult to enhance the thermal conductivity of PI films with BN nanoparticles with a diameter <100 nm due to the presence of high interfacial thermal resistance at the BN/PI interfaces. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015, 132, 42461.
    Journal of Applied Polymer Science 05/2015; 132(34). DOI:10.1002/app.42461 · 1.77 Impact Factor
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    ABSTRACT: In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10−9 Km2W−1 on SiN against 3.5 × 10−9 Km2W−1 on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm−1K−1 whatever the substrate.
    Applied Physics Letters 12/2014; 105(22):221905. DOI:10.1063/1.4903220 · 3.30 Impact Factor
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    ABSTRACT: The thermal conductivity of ordered mesoporous silicas SBA-15 type made up of primary micron size rod-shaped particles, with different states of aggregation and processed as monoliths without any binder has been studied. In particular, the influence of the post-synthesis thermal treatment of materials on the structural and textural characteristics and on the effective thermal conductivity was investigated. Thermal conductivity results were compared with observations by electronic microscopy and to the physicochemical data (X-ray diffraction, nitrogen adsorption/desorption volumetric measurements, 29Si and 13C solid-state NMR). It was observed that the elimination of the surfactant on the one hand, and the dehydroxylation of the silica network on the other hand, are partly responsible for variations in thermal conductivity. Thermal conductivity values in the range of 32–46 mW m−1 K−1 was also found dependent on the morphology of particle aggregates that strongly impacts the macroporosity. Good thermal stability of the silica mesostructures was also observed up to 900 °C with low thermal conductivity of about 46 mW m−1 K−1. These properties make these materials very promising for thermal insulation applications over a large temperature range (room temperature up to 900 °C).
    Microporous and Mesoporous Materials 09/2014; 201. DOI:10.1016/j.micromeso.2014.09.014 · 3.45 Impact Factor
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    ABSTRACT: The thermal conductivity of mesoporous silica particles prepared as fine powder and heat treated between 150 and 700 degrees C has been studied. Mesostructured silica particles of 30 nm diameter were synthesized through a derived sol-gel method in the presence of a cationic surfactant. The thermal conductivity was found to be ranged from 0.03 to 0.08 Wm(-1)K(-1) according to treatment and packing while the density, the porous volume and the specific surface area of materials varied between 350 and 700 kg/m(3), 0.01 and 1.21 cm(3)/g, and 10 and 420 m(2)/g, respectively. The analyses carried-out with X-ray diffraction, scanning electron microscopy, transmission electron microscopy, manometric adsorption/desorption of nitrogen, Fourier transform infrared spectrometry and solid-state nuclear magnetic resonance of Si-29 nucleus revealed that the thermal conductivity was modified in agreement with the structural changes subsequent to dehydration, decomposition of organic matter, loss of hydroxyl groups and sintering of silica particles.
    Microporous and Mesoporous Materials 05/2014; 190:109–116. DOI:10.1016/j.micromeso.2014.02.006 · 3.45 Impact Factor
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    Materials Sciences and Applications 01/2014; 05(13):953-965. DOI:10.4236/msa.2014.513097
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    ABSTRACT: Two kinds of polyimide-boron nitride (PI-BN) nanocomposite have been manufactured by the direct blending process using two different kinds and sizes of BN nanoparticles, referred as BN-1 and BN-2. A high power ultrasonic probe has been used to achieve the dispersion of BN nanoparticles within the polyimide precursor solution. Thermal conductivity has been evaluated for filler volume content up to 29.1% vol. for PI-BN-1 and 57.3% vol. for PI-BN-2. Thermal conductivity has been measured using a pulsed photo-thermal technique developed for determining the thermal properties of solid thin-films and coatings. The use of BN nanoparticles allows thermal conductivity to be increased but the observed increase depends strongly on the nanoparticle diameter. Thermal conductivity increases from 0.21 W/mK for the neat polyimide (PI) to 0.56 W/mK for the PI-BN-1 (29.1% vol.) However, when using lower size BN nanoparticles the thermal conductivity only increases up to 0.25 W/mK for the PI-BN-2 for higher volume content (57.3% vol.).
    2013 IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP 2013); 10/2013
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    ABSTRACT: We report the thermal properties of carbon nanowall layers produced by expanding beam radio-frequency plasma. The thermal properties of carbon nanowalls, grown at 600 °C on aluminium nitride thin-film sputtered on fused silica, were measured with a pulsed photo-thermal technique. The apparent thermal conductivity of the carbon at room temperature was found to increase from 20 to 80 Wm−1 K−1 while the thickness varied from 700 to 4300 nm, respectively. The intrinsic thermal conductivity of the carbon nanowalls attained 300 Wm−1 K−1 while the boundary thermal resistance with the aluminium nitride was 3.6 × 10−8 Km2 W−1. These results identify carbon nanowalls as promising material for thermal management applications.
    Applied Physics Letters 02/2013; 102(6). DOI:10.1063/1.4791686 · 3.30 Impact Factor
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    ABSTRACT: Crystallized manganese dioxide powders (cryptomelane type α-MnO2 and birnessite type δ-MnO2) were electrochemically investigated in mild aqueous electrolytes with the cavity microelectrode (CME) technique. Cyclic voltammetry was performed with isolated MnO2 powder and mixed acetylene black/MnO2 powder. High electrochemical performance is achieved showing the pseudocapacitive behavior of cryptomelane and the birnessite signature, which is exhibited by large, intense and more defined peaks, than for a composite electrode. The microcavity electrode (about 10−3 mm3) allows studies with only a few micrograms of MnO2 powder in order to display its intrinsic electrochemical behavior and to improve the understanding of the role of the different components in the composite electrode performance.
    Electrochimica Acta 12/2012; 86:268–276. DOI:10.1016/j.electacta.2012.06.004 · 4.50 Impact Factor
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    ABSTRACT: This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1} K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.
    Applied Physics Letters 10/2012; 101(15):151908. DOI:10.1063/1.4757298 · 3.30 Impact Factor
  • Christophe Batard · Nicolas Ginot · Joe Antonios · Yves Scudeller
  • B E Belkerk · M A Soussou · M Carette · M A Djouadi · Y Scudeller
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    ABSTRACT: This paper reports the ultra-fast transient hot-strip (THS) technique for determining the thermal conductivity of thin films and coatings of materials on substrates. The film thicknesses can vary between 10 nm and more than 10 µm. Precise measurement of thermal conductivity was performed with an experimental device generating ultra-short electrical pulses, and subsequent temperature increases were electrically measured on nanosecond and microsecond time scales. The electrical pulses were applied within metallized micro-strips patterned on the sample films and the temperature increases were analysed within time periods selected in the window [100 ns–10 µs]. The thermal conductivity of the films was extracted from the time-dependent thermal impedance of the samples derived from a three-dimensional heat diffusion model. The technique is described and its performance demonstrated on different materials covering a large thermal conductivity range. Experiments were carried out on bulk Si and thin films of amorphous SiO2 and crystallized aluminum nitride (AlN). The present approach can assess film thermal resistances as low as 10−8 K m2 W−1 with a precision of about 10%. This has never been attained before with the THS technique.
    Journal of Physics D Applied Physics 07/2012; 45(29):295303. DOI:10.1088/0022-3727/45/29/295303 · 2.72 Impact Factor
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    ABSTRACT: This paper presents a model reduction approach for constructing lumped RC thermal networks of IGBT-modules of inverters for which heat and subsequent temperature increases vary with time on different scales ranging from nanosecond to second. It was observed that the time-dependent heat and temperature profiles of transistors and diodes of IGBT-modules of inverters oscillate at two frequencies, one in the range 0.1–50 Hz corresponding to the load current modulation, and the other in the range 1–20 kHz corresponding to the switching frequency. The reduction approach consisted of decomposing the module into different elements, each being described with a number of RC cells selected according to the time-constant of the element with regard to the module. The lumped RC thermal networks were found in good agreement with the continuous model by offering a considerably lower computational time on the different time scales. For simplicity, the reduction approach is presented for one-dimensional heat flow through the cross-plane direction of the module.
    Microelectronics Journal 06/2012; 43(6):345–352. DOI:10.1016/j.mejo.2012.01.006 · 0.84 Impact Factor
  • D. Sakami · A. Lahmar · Y. Scudeller · F. Danes · J. P. Bardon
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    ABSTRACT: A new photothermal method for measuring the thermal contact resistance in the interfacial area is presented. Copper thin films were prepared on alumina substrates by physical vapour deposition. On the basis of a mathematical model developed here, thermal contact resistance was determined in samples of various thicknesses and processed under various argon pressures. The effects of these parameters on the films and interface properties are discussed. A correlation between the thermal contact resistance and the adhesion, as determined by the scratch test, is found. In order to understand the origin of the mean critical load and the thermal contact resistance evolution, observations were made by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The results obtained have shown that the change in stress level in the copper film and the formation of a new compound in the interfacial area seem to be the main reasons for the enhancement of heat transfer.
    Journal of Adhesion Science and Technology 04/2012; 15(12):1403-1416. DOI:10.1163/156856101753213268 · 0.96 Impact Factor
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    ABSTRACT: In order to better analyze and to explain the electrochemical and physical behavior during both charge and discharge of a manganese dioxide based ECs, an original electrochemical model is developed in this paper. The 1D model is an adaptation of the transmission line model (TLM), taking into account the cation diffusion in the solid oxide. A linear relation between redox potential and oxidation state is used and leads to a physical relation between its slope and the pseudo capacitance of the material, confirmed by an experimental investigation of cyclic voltammograms. The model can be applied for any metal oxide pseudo-capacitive material.
    Electrochimica Acta 04/2012; 67:41–49. DOI:10.1016/j.electacta.2012.01.110 · 4.50 Impact Factor
  • A. Alnukari · Yann Mahe · Serge Toutain · Yves Scudeller
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    ABSTRACT: This paper reports the design and performance of Sapphire-based active heatsink antenna for Integrated RF transmitter. The antenna consists of a high-thermal-conductivity Sapphire layer serving as electromagnetic emitter and heatsink. We present the topology of such antenna as its electromagnetic and thermal performance. The antenna has been investigated by simulations and measurements. It is evidenced that the Sapphire layer has no substantial influences on the gain, radiation pattern and return loss of the antenna. Heat removed by the Sapphire layer was found as high as 1 Watt per centimeter square while the thermal resistance of the transmitter was of 5.5 ° C/W. The transmitter could operate over a wide temperature range.
    Antennas and Propagation (EUCAP), 2012 6th European Conference on; 03/2012

Publication Stats

511 Citations
96.39 Total Impact Points


  • 2012–2015
    • Institut des Materiaux Jean Rouxel
      Naoned, Pays de la Loire, France
  • 2012–2014
    • French National Centre for Scientific Research
      • Institut des Matériaux Jean Rouxel
      Lutetia Parisorum, Île-de-France, France
  • 2007–2014
    • University of Nantes
      • Jean Rouxel Institute of Materials
      Naoned, Pays de la Loire, France
  • 2010
    • Polytech Nantes
      Naoned, Pays de la Loire, France