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ABSTRACT: A simple diffusion barrier technology for polycide gate electrodes
is presented. An extremely thin silicon nitride layer is formed by poly
Si surface nitridation with ECR nitrogen plasma of only nitrogen gas and
without substrate heating. The silicon nitride layer acts as an
excellent barrier to impurity diffusion from polysilicon to silicide. It
was found that barrier formation with ECR nitrogen plasma results in no
fatal degradation in the MOS interface characteristics. This technology
is very effective for making dual polycide gates inexpensively due to
its simplicity and a good affinity with conventional ULSI fabrication
processes
IEEE Transactions on Electron Devices 01/1996; · 2.32 Impact Factor
