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ABSTRACT: This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A new aluminum to aluminum nitride to aluminum direct bonded baseplate structure has been developed to increase reliability while reducing weight. The power chip layout has been optimized for efficient thermal management in both liquid and air cooled configurations. A novel four layer internal bus structure was developed to provide extremely low inductance for minimization of surge voltages. This paper will describe the design features, characteristics, and performance of this new module.
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE; 04/2011
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ABSTRACT: This paper will present optimized IGBT module packaging for three level inverters. Modules with nominal ratings ranging from 25 A to 600 A will be proposed. Total losses for a three level inverter using these new modules will be compared to the losses of a conventional two level inverter using newly developed computer simulation tools.
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE; 10/2010
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ABSTRACT: Since the introduction of the IGBT, improvements in power loss and efficiency have been achieved by applying new technologies. In this paper, refinements in fine pattern processing technology and optimization of the low impurity profile of the buffer layer using thin wafer technology are proposed to further reduce the power loss and improve efficiency in 1.7kV IGBT chips.
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE; 03/2010
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ABSTRACT: Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought as close to their theoretical limit as possible. In this paper, fine pattern processing technology is applied along with optimization of the low impurity profile of the buffer layer using thin wafer technology to further reduce the power loss.
Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE; 11/2008
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ABSTRACT: High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3kV level, a new IGBT and free-wheeling diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi method experiments to find the most influential design factors and to secure the most robust design.
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE; 10/2007
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ABSTRACT: This paper describes a new family of intelligent power modules utilizing a novel gate driver that automatically adjusts its driving speed as a function of collector current to provide an improved trade-off between switching losses and switching noise
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE; 04/2006
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ABSTRACT: This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured for the matrix converter application using the new RB-IGBT will also be presented.
Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE; 11/2004
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ABSTRACT: More than ten years have elapsed since IGBT modules first emerged as the preferred power semiconductor device for a wide range of industrial applications. During this time IGBT chip and module packaging technology has evolved through multiple generations each with incremental improvements in performance and reliability. At the same time optimized processing techniques and improved yields have reduced the cost of chip manufacturing. As a result, there are often attractive opportunities to upgrade the performance of industrial power conversion equipment while simultaneously reducing cost This paper will summarize the latest advances in IGBT technology and the implications for future applications.
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE; 02/2004
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ABSTRACT: A new 1400 A/1200 V MEGA POWER DUAL/spl trade/ IGBT module has been developed for high power industrial applications. The new module incorporates the latest advances in chip technology to produce a device with the rugged safe operating area and low losses required in high power industrial applications. The new power chip is based on an optimized wide cell pitch carrier stored trench bipolar transistor (CSTBT). The module features an optimized high current dual (half bridge) package with low parasitic inductance and integrated features designed to allow simplified assembly of high power inverters.
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the; 02/2002
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ABSTRACT: A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the; 02/2002
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ABSTRACT: Insulated gate bipolar transistors (IGBTs) based on the
non-punch-through (NPT) design approach exhibit excellent safe operating
area (SOA) and short-circuit endurance, a positive temperature
coefficient of on-state voltage over the operating current range, and
low silicon cost. These merits have supported the development and
commercialization of NPT IGBTs above the 1200-V class. However, the need
for quite thin silicon to obtain competitive on-state losses at 1200-V
and below classes has hindered the use of the NPT approach in this area.
A new punch-through (PT) IGBT has been developed which exhibits the
merits of the NPT approach, rugged SOA and short-circuit endurance,
while also having a better tradeoff relation between on-state voltage
and turn-off loss than either existing NPT or third-generation PT IGBTs
IEEE Transactions on Industry Applications 02/2002; · 1.66 Impact Factor
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ABSTRACT: Conventional gate turn-off (GTO) thyristors require costly dv/dt and di/dt snubber circuits as well as bulky gate drive circuits. Hard turn off in which all of the main current is commutated to the gate drive circuit with a turn-off gain of one has been looked upon as a way to reduce the dv/dt limitations of the conventional GTO. The new gate commutated turn-off (GCT) thyristor is optimized for this mode and is coupled with a low inductance gate drive circuit to greatly reduce the di/dt limitation and allow operation without a dv/dt snubber. A new soft recovery diode has been developed to provide the capability necessary to apply the superior characteristics of the new GCT in actual application.
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE; 11/1998
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ABSTRACT: A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE; 11/1998
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ABSTRACT: New process technologies are extending the application range of
IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using
an optimized punch-through design that achieves a positive temperature
coefficient of saturation voltage and rugged safe operating area of the
nonpunch-through approach while retaining the low loss characteristics
of punch-through technology. Special wafer processing, optimizing the
collector p+ concentration and local lifetime control, is employed to
achieve these characteristics. This paper discusses the adaptation of
the punch-through design to achieve the desired device characteristics
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE; 11/1997
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ABSTRACT: A new series of intelligent power modules (IPMs) designed for
miniature, high performance, low power (0.1 to 1.5 kW) 240 V AC motor
drives has been developed. The new IPMs contain IGBT and diode power
chips, a high voltage IC and low voltage control logic in a compact
isolated base module. Level shifting and charge pumping provided by the
high voltage IC allows the module to be operated from a single supply
referenced to the negative DC bus. The module has built in interlock
logic to prevent shoot-through conditions and protection against output
short-circuit, abnormal supply voltage and over temperature conditions.
The module uses four separate status output lines to communicate the
activation of the internal protection. Analog output current feedback
signals are also provided to allow high performance control of torque
and motor protection. The control inputs, status outputs and analog
current feedback signals are all designed for direct connection to a
microprocessor
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE; 11/1996
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ABSTRACT: New process technologies are extending the application range of
IGBT modules. A 1400 V IGBT with significantly improved efficiency has
been developed using an optimized epitaxial (punch-through) process.
This new 1400 V device has a square turn-off switching SOA making it
suitable for 575/608 VAC inverter applications. A very low saturation
voltage 250 V IGBT has been developed using a trench gate structure.
This new 250 V device offers significant size and efficiency advantages
in battery powered applications including fork lift truck and UPS
inverters
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE; 11/1995
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ABSTRACT: A novel low-loss, high-speed series of intelligent IGBT
(insulated-gate bipolar transistor) power modules has been developed.
Power device performance has been enhanced through the use of
third-generation IGBT chip technology with optimized gate drive and
control circuits. Short-circuit protection using current-sense IGBTs
with real-time current limiting allows power devices to be optimized for
lowest operational losses. Further reduction of losses is achieved
through the use of a new, ultrafast, soft-recovery, free wheel diode
chip. New compact isolated base packages containing six or seven power
devices with current ratings up to 200 A at 600 V, and 100 A at 1200 V
are designed for cost-effective, high-performance motor control
applications. The internal design philosophy and architecture of these
devices are explained
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE; 11/1993
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ABSTRACT: The design of power semiconductor chips has always involved a trade-off between switching speed, static losses, safe operating area and short-circuit withstanding capability. This paper presents an optimized structure for 1200 V IGBTs from the viewpoint of all-round performance. The new device is based on a novel wide cell pitch carrier stored trench bipolar transistor (CSTBT). Unlike conventional trench gate IGBTs, this structure simultaneously achieves both low on-state voltage and the rugged short-circuit capability desired for industrial applications.
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE;
