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ABSTRACT: The radiation degradation trend of an InGaP/GaAs dual-junction solar cell was studied to validate solar cell degradation-prediction methodologies. Ground irradiation test results and data from a space demonstration test performed in GTO for 600 days were compared. Equivalent fluences of 1 MeV electrons and 10 MeV protons for I<sub>SC</sub>, V<sub>OC</sub> and P<sub>max</sub> were obtained from the remaining factor at the end of the mission. The equivalent fluence of 10 MeV protons for the three output factors agreed better than that of 1 MeV electrons due to the proton-rich radiation environment in orbit. The degradation trends of the dual-junction cell were compared with that of single-junction sub-cells using displacement damage dose. The degradation of the dual-junction cell can be explained by the sub-cell degradation and operation principle of the dual-junction cell. However, the flight cell was found to exhibit faster degradation than expected from the ground test results.
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE; 02/2005
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ABSTRACT: Mission Demonstration-test Satellite No. 1, (MDS-1) launched in February 2002, has been flying in a geostationary transfer orbit (GTO), where the radiation environment is quite severe. We report the flight data for terrestrial solar cells on MDS-1 to investigate radiation tolerance. The flight data are also compared with ground test results using relative damage coefficients and the displacement damage methodologies.
Radiation Effects Data Workshop, 2003. IEEE; 08/2003
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ABSTRACT: We report experimental results of proton irradiations with various energies on InGaP/GaAs/Ge triple-junction (3J) solar cells. The 3J solar cells consisting of stacked three different sub-cells (InGaP top cell, GaAs middle cell and Ge bottom cell) were irradiated with various energies of protons. Proton penetration depth was calculated by the TRIM program. Current–voltage characteristic under AM0 simulated light and the spectral response under color bias light of the 3J cells were measured before and after the irradiations. Relative damage coefficients were obtained based on the irradiated cell performance. The results have revealed that protons with energy of a few hundred keV cause the most severe damage on 3J cells because the GaAs middle cell has the least radiation tolerance among the three sub-cells.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.
