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ABSTRACT: We demonstrate room temperature terahertz detection by AlGaN/GaN heterojunction field effect transistors (HFETs) integrated with an on-chip microstrip patch antenna. Polarization dependent photoresponse is observed in accordance with the design of the antenna.
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on; 07/2009
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ABSTRACT: This paper reports on high-power and high-temperature operation of an AlGaInP-based high-power red laser diode with magnesium (Mg)-doped quaternary-alloy cladding layer. The use of Mg dopant with small diffusion coefficient enables abrupt doping profiles as well as high carrier concentrations when compared to conventional zinc (Zn) dopant. It was also found that the metal-organic vapor phase epitaxial (MOVPE) growth of Mg-doped quaternary AlGaInP alloy is not affected by so-called reactor memory effects, while unintentional incorporation of Mg is observed in GaAs after the growth of Mg-doped GaAs layers. The higher carrier concentration in the p-type cladding layer enhanced carrier confinement in the active layer so that device performance at high temperature is improved. The abrupt doping profile suppressing dopant diffusion into the active layer eliminates the nonradiative recombination in the active layer resulting in higher external quantum efficiency. The characteristic temperature of the Mg-doped red laser with a lasing wavelength of 659 nm is as high as 167 K while the Zn-doped laser exhibits a temperature of 127 K. High kink-free output power of 150 mW is achieved at 75°C.
IEEE Journal of Quantum Electronics 01/2005; · 1.88 Impact Factor
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ABSTRACT: 780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80/spl deg/C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80/spl deg/C is obtained.
IEEE Photonics Technology Letters 07/2001; · 2.19 Impact Factor
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ABSTRACT: A window-mirror structure has been applied by Zn diffusion to real
refractive index guided self-aligned AlGaInP laser diodes for the first
time. Both a high catastrophic optical damage level of 152 mW and a high
slope efficiency of 0.83 W/A have been obtained, resulting in an
extremely low operating current of 225 mA, for a pulse output power of
150 mW at room temperature
Electronics Letters 01/2000; · 0.96 Impact Factor
