T Sakurai

Publications (2)0 Total impact

• Chapter: GaN Integration on Si via Symmetry-Converted Silicon-on-Insulator

  Y. Fujikawa, Y. Yamada-Takamura, Z. T. Wang, G. Yoshikawa, T. Sakurai
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  ABSTRACT: Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented (i.e., (001)) silicon wafers, which have fourfold symmetry, has been a longstanding challenge. We demonstrate that, by using symmetry-converted (111) silicon-on-insulator, we can integrate wurtzite-structure gallium nitride, which has threefold symmetry, with Si (001). The stability of the symmetry-converted Si (111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si (001) base wafers.
  12/2007: pages 295-303;
• Source

  Available from: Yukiko Yamada-Takamura

  Article: Silicon on insulator for symmetry-converted growth

  Y Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T Ono, M. Esashi, P. P. Zhang, M G Lagally, T Sakurai
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  ABSTRACT: Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers. c 2007 American Institute of Physics.