T Hoshi

Publications (2)0 Total impact

• Conference Proceeding: SiN-capped HfSiON gate stacks with improved bias temperature instabilities for 65 nm-node low-standby-power transistors

  Y. Tamura, T. Sasaki, N. Izumi, F. Ootsuka, M. Yasuhira, T. Hoshi, S. Kume, H. Amai, T. Ida, T. Aoyama, S. Kamiyama, K. Torii, H. Kitajima, T. Arikado
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  ABSTRACT: This paper describes the SiN-capped HfSiON gate stacks for 65 nm-node low-standby-power transistors with improved bias temperature instabilities (BTI). By employing SiN-cap on HfSiON and the counter-implant for adjustment of pFET's threshold voltage (V_TH), the symmetrical V_TH values for nFETs and pFETs have been obtained. The nitrogen incorporation in the interfacial oxide prevents the interface states generation under positive bias temperature stress. Negative BTI can be improved by reducing the thickness of SiN-cap. 10-year lifetimes for both positive and negative BTI have been achieved.
  VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on; 07/2004
• Conference Proceeding: The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks

  T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado
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  ABSTRACT: In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO₂. We also report the drastic improvements in the gate leakage, V_th shift and NBTI.
  Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on; 12/2003