[show abstract] [hide abstract]
ABSTRACT: A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of ~1,000 nm<sup>2</sup> with 0.23 mA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008