Publications (8)0 Total impact
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Article: Rapid thermal annealed Al-doped ZnO film for a UV detector
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ABSTRACT: A low-resistive Al-doped ZnO (AZO) film was achieved by rapid thermal annealing. A co-sputtering method was used in the initial growth of AZO films and a rapid annealing process was performed on the as-deposited AZO film under N2 atmosphere for 3 min. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of 7.8103 cm. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and 1103 cm, respectively. The structural changes of the AZO films were investigated by X-ray diffraction and transmission electron microscopy. The high quality AZO film was used to fabricate a metalsemiconductormetal (MSM) structure for aUV detector. TheMSMdevice provided a stable current of 25 A at a bias of 2 V in a dark condition. Under UV illumination, theMSMdevice was highly responsive to UV light uniformly and repeatedly, and it enhanced the current by 80% at 45 A. This rapid thermal annealing process may provide a useful method to fabricate quality AZO films for photoelectric applications with a low thermal budget.Materials Letters. 01/2011; 65:786-789. -
Book: Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars
01/2011; AIP. -
Chapter: Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes
01/2011: pages 033102; -
Conference Proceeding: A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared by electroless etching with conformal plasma doping
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ABSTRACT: Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photo-voltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect (see Fig. 1) was observed by employing the tapered NWs. Si MWs that formed a radial p-n junction were located in between the dense array of Si NWs. These wire arrays were cost-effectively defined by metal-assisted electro-less wet etching. The co-integrated nanostructure of Si NWs and MWs demonstrated a high short circuit current (J<sub>sc</sub>) and cell conversion efficiency (CE) compared to a sole array of Si NWs or MWs. Highest values of J<sub>sc</sub> and CE at 1.5AM illumination were recorded as 24.89 mA/cm<sup>2</sup> and 8.45%, respectively, which have been champion data reported to date in wire based PV cells using a radial p-n junction.Electron Devices Meeting (IEDM), 2009 IEEE International; 01/2010 -
Book: Optical properties of silicon nanowires array fabricated by metal-assisted electroless etching
01/2010; SPIE. -
Book: Ni-catalyzed growth of silicon wire arrays for a Schottky diode
01/2010; AIP. -
Article: A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared by electroless etching with conformal plasma doping
[show abstract] [hide abstract]
ABSTRACT: Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photo-voltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect (see Fig. 1) was observed by employing the ta-pered NWs. Si MWs that formed a radial p-n junction were located in between the dense array of Si NWs. These wire arrays were cost-effectively defined by metal-assisted electro-less wet etching. The co-integrated nanostructure of Si NWs and MWs demonstrated a high short circuit current (J sc) and cell conversion efficiency (CE) compared to a sole array of Si NWs or MWs. Highest values of J sc and CE at 1.5AM illumi-nation were recorded as 24.89 mA/cm 2 and 8.45%, respective-ly, which have been champion data reported to date in wire based PV cells using a radial p-n junction.01/2009; -
Book: Effect of oxide thickness on the low temperature ( ? 400?°C) growth of cone-shaped silicon nanowires
01/2007; AIP.
Top co-authors
Institutions
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2009–2010
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Hanyang University
- Department of Materials & Chemical Engineering
Ansan, Gyeonggi, South Korea
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