S Arai

Publications (2)0 Total impact

• Conference Proceeding: Ka-band monolithic GaAs two-stage power amplifier

  Y. Oda, T. Yoshida, K. Kai, S. Arai, S. Yanagawa
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  ABSTRACT: The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers.< >
  Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989; 07/1989
• Conference Proceeding: Ka-band 1 watt power GaAs MMICs

  Y. Oda, S. Arai, T. Yoshida, H. Nakamura, S. Yanagawa, S. Hori, K. Kamei
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  ABSTRACT: High-power and high-gain Ka -band GaAs monolithic microwave integrated circuits (MMICs) were developed using a Be coimplantation technique. At 29.5 GHz, an output power of 1 W with 4.2 dB gain was obtained for a 4.8-mm width MMIC. An intercept point of +42 dBm has been obtained from the third-order intermodulation distortion measurement
  Microwave Symposium Digest, 1988., IEEE MTT-S International; 06/1988