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Publications (1)0.32 Total impact

  • Seongjae Cho · I. Mankang · Kyung Rok Kim ·
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    ABSTRACT: We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.
    IEICE Electronics Express 10/2010; 7(19):1499-1503. DOI:10.1587/elex.7.1499 · 0.32 Impact Factor

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1 Citation
0.32 Total Impact Points

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