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ABSTRACT: We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.
IEICE Electronics Express 10/2010; 7(19):1499-1503. DOI:10.1587/elex.7.1499 · 0.32 Impact Factor