N Negishi,
T Nakada,
K. Sakemura,
Y Okuda,
H Satoh,
A Watanabe,
T Yoshikawa,
K Ogasawara, M Namba,
S Okazaki,
K. Tanioka,
N. Egami,
N. Koshida
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ABSTRACT: A 256 × 192 pixels active-matrix cold electron emitter array with integrated scan driver circuits is developed. The basic structure of the electron emitter is almost the same as that of an advanced HEED (high-efficiency electron emission device) previously reported. The emission current density of the active-matrix HEED has been enhanced more than 100 times compared to that of the advanced HEED under the passive operation mode. It is demonstrated that the developed emitter can be applied to flat image sensing with a high-gain avalanche rushing amorphous photoconductor (HARP) target.
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International; 08/2005
