Mitsuru Matsuura

Yamaguchi University, Yamaguti, Yamaguchi, Japan

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Publications (121)102.29 Total impact

  • H.kurisu · J.horie · · S.yamamoto · M.matsuura ·
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    ABSTRACT: We investigated photoluminescence properties of the exciton and the biexciton in CuCl quantum dots embedded in an SiO2 matrix on (λ/4)TiO2/(λ/4)SiO2 dielectric multilayers of the distributed Bragg reflector. The intensities of the free exciton luminescence band and the biexciton luminescence bands are enhanced by factors 2 and 6 times in comparison with those in only CuCl quantum dots embedded in an SiO2 matrix. The origin of this luminescence behavior is partly reflection effects of the luminescence and excitation laser lights but additional effects need to be considered. One possible candidate is the strong exciton-photon interaction due to the confinement effect of the photons in the active layer with CuCl quantum dots.
    International Journal of Modern Physics B 01/2012; 15(28n30). DOI:10.1142/S0217979201008809 · 0.94 Impact Factor
  • Kenji Koga · Koji Akai · Kazunori Oshiro · Mitsuru Matsuura ·
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    ABSTRACT: Electronic structure of CoSb3 is calculated by means of full-potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The calculated band gap of CoSb3 with the consideration of spin-orbit (SO) interaction is 110meV, which is about a half of that without SO interaction. It is found that simple four bands model with the Kane's nonparabolic valence and conduction bands, two parabolic conduction bands describe calculated electronic structure near band edge very well. Using the simple four bands model, thermoelectric properties are calculated and are discussed. Larger band gap, e.g., Eg=200meV with the microscopic mechanism such as phonon scattering yields a fair agreement with the experiment in a wide range of temperature.
    MRS Online Proceeding Library 01/2011; 691. DOI:10.1557/PROC-691-G9.3
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    ABSTRACT: We calculated electronic structures of Ba8Al16Ge30 in some Al-Ge framework configurations without nearest-neighbor Al-Al bonds by using a first-principles method. The calculated band structures are similar in outline but different in detail. We also calculated thermoelectric properties by using the electronic structures to analyze the experimental results on a sintered Ba8Al16Ge30 sample. The calculated properties nearly agree with the experimental results; however, the calculated temperature dependences of electrical conductivity are slightly different from one another, because of differences in electronic structure. In this paper, we discuss the temperature dependence from the viewpoints of nonparabolic band effects.
    Journal of Electronic Materials 07/2009; 38(7). DOI:10.1007/s11664-009-0727-1 · 1.80 Impact Factor
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    ABSTRACT: The thermoelectric properties of the clathrate compounds Ba8ZnxGe46−x were studied theoretically and experimentally. First, a first-principles electronic structure calculation was performed. The calculated result showed that Ba8Zn8Ge38 is an intrinsic semiconductor with an indirect band gap, while Ba8Zn6Ge40 is an n-type degenerate semiconductor and Ba8Zn10Ge36 is a p-type degenerate semiconductor. A large x dependence for the band gap was found between x=6 and 8, i.e., the widths of band gap Eg at x=6, 8 and 10 were 0.83 eV, 0.40 eV, 0.35 eV, respectively. Thus, for a thermoelectric material with high performance at high temperatures, the band gap of the intrinsic semiconductor Ba8Zn8Ge38 is relatively small. On the other hand, it was found that the double substituted clathrate Ba8Zn6Ga4Ge36 is an intrinsic semiconductor with a relatively large band gap: Eg=0.69 eV. Second, we synthesized Zn substituted clathrate compounds by using the mechanical alloying and spark plasma sintering method, and measured the thermoelectric properties of the synthesized samples to show the concrete advantage of the Ba-Zn-Ga-Ge system. The experimental results showed that all of the Ba8ZnxGe46−x (x=6,8,10,12) samples were n-type semiconductors, and that some of the Zn clathrates (x=6∼10) had a reasonably good n-type thermoelectric ability. Moreover, it was confirmed that the band gap of Ba8Zn6Ga4Ge36 (Eg=0.9 eV) is wider than that of Ba8Zn8Ge38 (Eg=0.4 eV), and that Ba8Zn6Ga4Ge36 has better thermoelectric characteristics than Ba8Zn8Ge38 at high temperatures. Finally, the experimental thermoelectric properties were theoretically analyzed by using the results of the electronic structure calculation and good agreement was obtained.
    Materials transactions 03/2009; 50(3):631-639. DOI:10.2320/matertrans.E-MRA2008846 · 0.68 Impact Factor
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    ABSTRACT: Thermoelectric properties of Al-substituted Ge clathrate compounds Ba <sub>8</sub> Al <sub>x</sub> Ge <sub>46-x</sub> were investigated experimentally and theoretically. Polycrystalline Ba <sub>8</sub> Al <sub>x</sub> Ge <sub>46-x</sub> (x=12–18) was synthesized by using an arc melting and a spark plasma sintering technique. The obtained samples show the n -type behavior and the carrier concentration decreases with increasing amount of Al composition from x=12 to 16. The reasonably large power factors was obtained: 900–1000 μ W / cm   K <sup>2</sup> around 900 K. Theoretically electronic structure of Ba <sub>8</sub> Al <sub>16</sub> Ge <sub>30</sub> was calculated by means of a first-principles method and then thermoelectric properties were analyzed on the basis of the result of the calculated electronic structure. The calculated thermoelectric properties agree with the experimental results very well in the wide range of temperature between room temperature and 900 K.
    Journal of Applied Physics 08/2008; 104(1-104):013702 - 013702-8. DOI:10.1063/1.2947593 · 2.18 Impact Factor
  • Kenji Koga · Hiroaki Anno · Koji Akai · Mitsuru Matsuura · Kakuei Matsubara ·
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    ABSTRACT: The electronic structure and thermoelectric properties of guest substituted clathrate compounds Ba6R2Au6Ge40 (R = Eu, Yb) are calculated using the full-potential linearized augmented plane wave method based on the density functional theory. The bottom of conduction band for Ba8Au6Ge40 is formed by one relativity dispersive band close to the M point. When the Ba 2a site is replaced by Eu and Yb, the lowest conduction bands at X point shift to lower energy side. The coupling between gusest atom at 2a sites and the host framework becomes weaker with decreasing ionic radii. This multivalley effect in M and X points yields the increase in the density of states near the conduction band edge, resulting in the increase in the Seebeck coefficient for n-type doping. On the other hand, the valence band edge is almost independent of the guests; the f-bands of Eu and Yb are narrow and distant from the band edge. The effect of Eu and Yb substitution on the Seebeck coefficient is small for p-type doping at higher temperature.
    Materials transactions 08/2007; 48(8):2108-2113. DOI:10.2320/matertrans.E-MRA2007865 · 0.68 Impact Factor
  • Kengo Kishimoto · Tsuyoshi Koyanagi · Koji Akai · Mitsuru Matsuura ·
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    ABSTRACT: Tellurium-containing cationic clathrates Si46-xPxTe8 (x = 11--17) were synthesized using powder metallurgy. This study crystallized the Pm\bar{3}n (No. 223) structure and showed a p-type conductivity; their band gap energy is estimated to be 1.24 eV. Although the Si46-xPxTe8 samples with x = 16 and 17 were intrinsic, the samples with x = 11--15 were degenerated semiconductors; their electrical conductivity σ increased and their Seebeck coefficient S almost decreased with decreasing x. A power factor S2σ of 12 μW cm-1 K-2 at 1000 K and a dimensionless figure of merit \mathit{ZT} of 0.45 at 900 K were achieved for a p-type silicon clathrate Si33P13Te8.
    Japanese Journal of Applied Physics 07/2007; 46(29-32):L746-L748. DOI:10.1143/JJAP.46.L746 · 1.13 Impact Factor
  • Koji Akai · Kenji Koga · Mitsuru Matsuura ·
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    ABSTRACT: Electronic structure and thermoelectric properties of noble metal clathrates Ba8M6Ge40(M = Cu, Ag, An) were calculated by using a first principle based method to discuss prospect of high performance thermoelectric materials. The calculated band structures show that these clathrate compounds are degenerate semiconductors with 1) type carrier. The band gaps become narrow by noble metal doping. The band gap narrowing is caused by the valence band lifting due to anti-bonding nature between Ge and M, and conduction band widening due to frameworkguest atom coupling via Ba orbitals at 6d sites. The thermoelectric power of Ba8M6Ge40 increases with temperatures monotonically and the magnitude is smaller than 100 mu V/K under 1000K. The carrier concentration of Ba(8)M(6)GC(40) is a little larger for the high performance thermoelectric materials. The carrier concentration is controlled by varying the composition of Ba8AuxGe46-x. The optimized carrier concentration in Ba8AuxGe46-x was obtained as 4.4 x 10(26) m(-3) (p type) and 6.4 x 10(26) m(-3) (n type), respectively.
    Materials transactions 04/2007; 48(4):684-688. DOI:10.2320/matertrans.48.684 · 0.68 Impact Factor
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    ABSTRACT: The surface oxide layer of a titanium alloy treated by mechanochemical polishing (MCP) was characterized using a scanning electron microscope (SEM), transmission electron microscope (TEM), atomic force microscope (AFM), X-ray photoelectoron spectoroscopy (XPS), auger electoron spectoroscopy (AES) and secondary ion mass spectrometry (SIMS). The results showed that surface oxide layer was amorphous titanium oxide and had about 5 nm thickness. At the interface between surface oxide layer and substrate, there was a region of high hydrogen concentration. In the same region, the Ti-F chemical component was found. It seems that this interface layer acts as a barrier for the bulk hydrogen diffusion, and gives low hydrogen concentration at the surface layer resulting in the low outgassing property in the titanium materials.
    Shinku 01/2007; 50(1):53-56. DOI:10.3131/jvsj.50.53
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    ABSTRACT: A reactive sputtering apparatus utilizing electron cyclotron resonance (ECR) was developed for the deposition of thick oxide or nitride films usable in electric devices. A high deposition rate of 44 nm/min. was achieved using a conic alloy target and the deposited soft ferrite thin films were successfully crystallized without heat treatment during film deposition. Magnetic and physical properties for the film were analyzed in terms of saturation magnetization, coercivity, uniformity of film thickness, and inner stress. Obtained properties were consistent with soft magnetic films. The result confirms the oxygen partial pressure ratio to deposition rate strongly affected the magnetic properties. Well crystallized, ultra thin 3-nm-thick Ni-Zn ferrite (100) films, were also successfully deposited on MgO (100) underlayers. These results imply the ECR sputtering method is one of the most effective deposition methods for highly crystallized polycrystalline thick and thin films. Crystal orientation was improved by low target voltage sputtering as well as a relatively low deposition rate. Further improvement is considered to be possible by deposition at lower base pressures.
    Shinku 01/2007; 49(7):424-429. DOI:10.3131/jvsj.49.424
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    ABSTRACT: This paper reviewed the vacuum characteristic of titanium materials and applications to an UHV system of the current research and development. It has been found that the outgassing rate of the titanium material is very low compared with an existing material such as a stainless steel or an aluminum alloy, and the UHV system made of the titanium material has very high vacuum performance, e.g., very quick pumping and the achievement of UHV/XHV pressure under the simple pre-baking condition.
    Journal of the Vacuum Society of Japan 01/2007; 50(1):41-46. DOI:10.3131/jvsj.50.41
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    ABSTRACT: Nd-Fe-B type powder was sintered using spark plasma sintering method. Fabricated compact sintered at the temperature of 700°C, is found to be a composite magnet with Nd-Fe-Co-B and α-Fe. The compact sintered at 700°C shows slightly low coercivity and large remanent magnetization comparing to the compact sintered at 600°C due to the formation of α-Fe phase, resulting in the large maximum energy product. Maximum energy product tends to decrease with decreasing thickness of sintered compacts below 0.5 mm in thickness.
    Materials Science Forum 01/2007; 534-536. DOI:10.4028/
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    ABSTRACT: We developed a chemical polishing (CP) for titanium materials applicable to ultrahigh vacuum (UHV) and extremely high vacuum (XHV) systems. The surface roughness, Ra, of the chemically polished titanium is obtained to be 25 nm by the atomic force microscopy measurement. This value is smaller than those of the base metal (BM) and the buff-polished (BP) samples. The thickness of the surface oxide layer of CP sample is estimated to be 7 nm by the cross section of transmission electron micrograph. Amount of desorption gas of CP sample obtained by the thermal desorption measurement is smaller than those of BM and BP sample, and is the same as that of the mechanochemically polished (MCP) sample. The outgassing rate of CP sample after baking at 150°C×20 h is obtained to be 7×10-13 Pa•m•s-1. This value is lower than that of standard vacuum materials by two orders of magnitude after the ordinary baking.
    Shinku 01/2007; 49(4):254-258. DOI:10.3131/jvsj.49.254

  • Journal of the Japan Society of Powder and Powder Metallurgy 01/2007; 54(8):576-583. DOI:10.2497/jjspm.54.576
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    ABSTRACT: The tellurium-containing cationic type-I clathrate Ge <sub>30</sub> P <sub>16</sub> Te <sub>8</sub> was synthesized and its thermoelectric properties were investigated. This clathrate showed a p -type conductivity, while most of the clathrates are n type. The Ge <sub>30</sub> P <sub>16</sub> Te <sub>8</sub> clathrate had a band gap energy of 0.62 eV and a room temperature thermal conductivity of 9 mW cm <sup>-1</sup> K <sup>-1</sup> , which is as low as those of germanium clathrates such as anionic Sr <sub>8</sub> Ga <sub>16</sub> Ge <sub>30</sub> and cationic Ge <sub>38</sub> Sb <sub>8</sub> I <sub>8</sub> . The electronic structure of the Ge <sub>30</sub> P <sub>16</sub> Te <sub>8</sub> clathrate was also calculated using an ab initio method.
    Applied Physics Letters 11/2006; 89(17-89):172106 - 172106-3. DOI:10.1063/1.2364473 · 3.30 Impact Factor
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    ABSTRACT: Outgassing properties and surface profiles of titanium materials have been investigated in this paper. Titanium materials showed excellent outgassing rates below 10<sup>-12</sup> Pams<sup>-1</sup> after baking process. These values are two orders of magnitude smaller than that for standard vacuum materials under the same pre-baking condition. Outgassing rates of the pure titanium of JIS grade 2, titanium alloy, KS100, are about 1/4 of that for a stainless steel without baking process. Titanium materials are applicable for the vacuum chamber and vacuum components. The vacuum equipment made of the titanium material has excellent vacuum performance, e.g., very quick evacuation and UHV/XHV pressures are easily obtainable
    Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on; 10/2006
  • H. Kondo · A. Takeda · T. Tomikawa · H. Kurisu · S. Yamamoto · M. Matsuura ·
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    ABSTRACT: We study optical spectra of cavity modes of exciton–polaritons in an organic crystal. The cavity is composed of distributed Bragg reflectors and anthracene crystals occupy the gap of the cavity. Many transmittance peaks corresponding to the cavity modes appear in the photonic band gap region of the transmittance spectra. The spectral positions of the cavity modes converge to the exciton resonance in anthracene. Dispersion of the cavity modes is obtained from the spectral peaks. It looks like a dispersion of the exciton–polariton in anthracene; however it differs slightly from the dispersion curve of the polariton. This discrepancy between the dispersion of the modes and the polariton curve is ascribed to the effective cavity length varying with the refractive index of anthracene.
    Journal of Luminescence 07/2006; 119:137-141. DOI:10.1016/j.jlumin.2005.12.021 · 2.72 Impact Factor
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    ABSTRACT: Well-crystallized Ni-Zn ferrite (Ni0.4Zn0.6Fe2O4) highly oriented ultrathin films were obtained at a substrate temperature of 200 °C by a reactive sputtering method utilizing electron cyclotron resonance microwave plasma, which is very effective to crystallize oxide or nitride materials without heat treatment. Thin films of Ni-Zn ferrite deposited on a MgO (100) underlayer showed an intense X-ray-diffraction peak of (400) from the Ni-Zn ferrite as compared to similar films deposited directly onto thermally oxidized Si substrates. A 1.5-nm-thick Ni-Zn ferrite film, which corresponds to twice the lattice constant for bulk Ni-Zn ferrite, crystallized on a MgO (100) underlayer.
    Journal of Applied Physics 04/2006; 99(8):507-08. DOI:10.1063/1.2169538 · 2.18 Impact Factor
  • T. Tsujimoto · T. Tanaka · K. Oshiro · H. Fujimori · M. Matsuura · S. Goto · S. Yamamoto ·
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    ABSTRACT: Titanium/hydroxyapatite hybrid biomaterial is proposed to have both osteoconductivity and mechanical strength as alternative bone materials. The titanium/hydroxyapatite hybrid material was prepared by spark plasma sintering (SPS) method which is a suitable to sinter dense compacts at relatively low temperature in short time in vacuum, to obtain bending strength and suppress a compositional change for sintered materials. The three-point bending test showed the bending strength for the fabricated titan ium/hydroxyapatite hybrid materials were stronger than that for human bone. As hydroxyapatite content of the hybrid materials increased, the amount of hydroxyapatite forming on the surface of hybrid materials increased in the simulated body fluid (SBF) test. Titanium/hydroxyapatite hybrid materials with 4-8 wt. % of hydroxyapatite showed Vickers microhardness of higher than 4 GPa, bending strength higher than 400 MPa, and osteoconductivity. Because of these properties, titanium/hydroxyapatite hybrid material is expected to be an attractive candidate for biomaterials.
  • G. J. Zhao · K. Akai · M. Matsuura ·
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    ABSTRACT: The electronic structure and thermoelectric properties of Nax CoO2 ware calculated by using a full-potential linearized augmented plane-wave (FLAPW) method with a generalized gradient approximation (GGA). The partial occupancy of Na ion was taken account by the virtual-crystal like approximation. The calculated density of states is good agreement with the XPS data. The thermoelectric power was calculated by using the results of the band structure calculation within the linearized Boltzmann equation. Energy dependence of a relaxation time was neglected. The calculated thermoelectric power of Na0.85CoO2 reproduced experimental results very well for the wide temperature range without any adjustable parameter
    01/2006; DOI:10.1109/ICT.2006.331388

Publication Stats

552 Citations
102.29 Total Impact Points


  • 1997-2012
    • Yamaguchi University
      • • Department of Science and Engineering
      • • Graduate School of Science and Engineering
      • • Faculty of Engineering
      Yamaguti, Yamaguchi, Japan
  • 2007-2009
    • The Open University of Japan
      Edo, Tōkyō, Japan
  • 2006
    • Air University
      Maxwell, California, United States