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Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on; 05/1992
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Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on; 05/1992
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ABSTRACT: A new model of ‘‘new donors’’ is presented, based on electrical, infrared measurements, transmission electron microscopy, and high‐resolution electron microscopy observations on Czochralski‐grown silicon single crystals containing ‘‘new donors.’’ In this model, the electrical activity of ‘‘new donors’’ originates from the uncoordinated Si dangling bonds on small dislocation loops resulting from oxygen precipitation. In comparison with other models, the present model can better explain the experimental results of the heat treatment Czochralski‐grown Si wafers.
Journal of Applied Physics 09/1990; · 2.17 Impact Factor
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ABSTRACT: The electrical properties and structural defects of Te‐doped GaAs grown in space have been investigated by using various techniques. The experimental results confirm that the microgravity conditions offer some advantages for the melt growth of III‐V compound semiconductor materials; improvements of homogeneity and perfection as well as purity of the space GaAs single crystal are expected.
Journal of Applied Physics 03/1990; · 2.17 Impact Factor
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ABSTRACT: The electron photoionization cross‐section spectra of the Si:Pd E A level at various temperatures are obtained for the first time. It is shown that the cross‐section spectra around the threshold energy shift to lower energy when the temperature rises. Instead of the variation of the energy gap or the broadening effect of lattice relaxation, photothermal excitation via an excited state at 45 meV below the bottom of the conduction band causes this energy shift. The energy from the ground state to the excited state derived from both optical and thermal data is 370 meV.
Journal of Applied Physics 12/1988; · 2.17 Impact Factor
