Publications (2)40.24 Total impact
-
Article: Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.
[show abstract] [hide abstract]
ABSTRACT: Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.Nature Communications 01/2012; 3:888. · 7.40 Impact Factor -
Article: Electrical control of the ferromagnetic phase transition in cobalt at room temperature.
[show abstract] [hide abstract]
ABSTRACT: Electrical control of magnetic properties is crucial for device applications in the field of spintronics. Although the magnetic coercivity or anisotropy has been successfully controlled electrically in metals as well as in semiconductors, the electrical control of Curie temperature has been realized only in semiconductors at low temperature. Here, we demonstrate the room-temperature electrical control of the ferromagnetic phase transition in cobalt, one of the most representative transition-metal ferromagnets. Solid-state field effect devices consisting of a ultrathin cobalt film covered by a dielectric layer and a gate electrode were fabricated. We prove that the Curie temperature of cobalt can be changed by up to 12 K by applying a gate electric field of about ±2 MV cm(-1). The two-dimensionality of the cobalt film may be relevant to our observations. The demonstrated electric field effect in the ferromagnetic metal at room temperature is a significant step towards realizing future low-power magnetic applications.Nature Material 11/2011; 10(11):853-6. · 32.84 Impact Factor
