Publications (2)3.23 Total impact
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Article: A 16-Mb Toggle MRAM With Burst Modes
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ABSTRACT: This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, we propose a distributed-driver wide-swing current-mirror scheme, an interleaved and pipelined memory-array group activation scheme, and a noise-insulation switch scheme. These circuit schemes compensate the toggle cell timing overhead in write modes and maintain write-current precision that is essential for the wide operational margin of MRAMs. Because toggle cells are very resistant to write disturbance errors, we designed the 16-Mb MRAM to include a toggle MRAM cell. The MRAM was fabricated with 0.13-mum CMOS and 0.24-mum MRAM processes with five metal layers.IEEE Journal of Solid-State Circuits 12/2007; · 3.23 Impact Factor -
Conference Proceeding: Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current
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ABSTRACT: Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on; 07/2005
