Publications (2)0 Total impact
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ABSTRACT: A low-resistive Al-doped ZnO (AZO) film was achieved by rapid thermal annealing. A co-sputtering method was used in the initial growth of AZO films and a rapid annealing process was performed on the as-deposited AZO film under N2 atmosphere for 3 min. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of 7.8103 cm. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and 1103 cm, respectively. The structural changes of the AZO films were investigated by X-ray diffraction and transmission electron microscopy. The high quality AZO film was used to fabricate a metalsemiconductormetal (MSM) structure for aUV detector. TheMSMdevice provided a stable current of 25 A at a bias of 2 V in a dark condition. Under UV illumination, theMSMdevice was highly responsive to UV light uniformly and repeatedly, and it enhanced the current by 80% at 45 A. This rapid thermal annealing process may provide a useful method to fabricate quality AZO films for photoelectric applications with a low thermal budget.Materials Letters. 01/2011; 65:786-789.
Materials Letters. 01/2011; 65(4):786-789.