Publications (2)2.32 Total impact
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Article: Dark current reduction in stacked-type CMOS-APS for charged particle imaging
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ABSTRACT: A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. At low operation temperatures (<200 K), the dark current of the CMOS-APS is determined by the hot carrier effect. A twin well CMOS pixel with a p-MOS readout and n-MOS reset circuit achieves low leakage current as low as 5×10<sup>-8</sup> V/s at the pixel electrode under liquid nitrogen temperature of 77 K. The total read noise floor of 0.1 mV<sub>rms</sub> at the pixel electrode was obtained by nondestructive readout correlated double sampling (CDS) with the CDS interval of 21 s.IEEE Transactions on Electron Devices 02/2003; · 2.32 Impact Factor -
Conference Proceeding: A low dark current stacked CMOS-APS for charged particle imaging
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ABSTRACT: A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10<sup>-8</sup> V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 secondsElectron Devices Meeting, 2001. IEDM Technical Digest. International; 02/2001