J Nakamura

Publications (2)2.32 Total impact

• Source

  Available from: ericfossum.com

  Article: Dark current reduction in stacked-type CMOS-APS for charged particle imaging

  I. Takayanagi, J. Nakamura, E.R. Fossum, K. Nagashima, T. Kunihoro, H. Yurimoto
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  ABSTRACT: A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. At low operation temperatures (<200 K), the dark current of the CMOS-APS is determined by the hot carrier effect. A twin well CMOS pixel with a p-MOS readout and n-MOS reset circuit achieves low leakage current as low as 5×10^-8 V/s at the pixel electrode under liquid nitrogen temperature of 77 K. The total read noise floor of 0.1 mV_rms at the pixel electrode was obtained by nondestructive readout correlated double sampling (CDS) with the CDS interval of 21 s.
  IEEE Transactions on Electron Devices 02/2003; · 2.32 Impact Factor
• Source

  Available from: ericfossum.com

  Conference Proceeding: A low dark current stacked CMOS-APS for charged particle imaging

  I. Takayanagi, J. Nakamura, E.-S. Eid, E.R. Fossum, K. Nagashima, T. Kunihiro, H. Yurimoto
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  ABSTRACT: A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10^-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds
  Electron Devices Meeting, 2001. IEDM Technical Digest. International; 02/2001