J-R Yang

National Taiwan University, Taipei, Taipei, Taiwan

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Publications (1)1.92 Total impact

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    ABSTRACT: Charge trapping characteristics of high-relative permittivity (high-κ) HfO2 films with Al2O3 as a blocking oxide in p-Si/SiO2/HfO2/Al2O3/metal memory structures have been investigated. All high-κ films have been grown by atomic layer deposition. A transmission electron microscope image shows that the HfO2 film is polycrystalline, while the Al2O3 film is partially crystalline after a high temperature annealing treatment at 1000 °C for 10 s in N2 ambient. A well-behaved counter-clockwise capacitance–voltage hysteresis has been observed for all memory capacitors. A large memory window of ~7.4 V and a high charge trapping density of ~1.1 × 1013 cm−2 have been observed for high-κ HfO2 charge trapping memory capacitors. The memory window and charge trapping density can be increased with increasing thickness of the HfO2 film. The charge loss can be decreased using a thick trapping layer or thick tunnelling oxide. A high work function metal gate electrode shows low charge loss and large memory window after 10 years of retention. High-κ HfO2 memory devices with high-κ Al2O3 as a blocking oxide and a high work function metal gate can be used in future high-density non-volatile memory device applications.
    Semiconductor Science and Technology 06/2007; 22(8):884. · 2.21 Impact Factor

Publication Stats

29 Citations
1.92 Total Impact Points


  • 2007
    • National Taiwan University
      • Department of Materials Science and Engineering
      Taipei, Taipei, Taiwan