Joachim D. Jambreck

Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Bavaria, Germany

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Publications (7)6.71 Total impact

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    ABSTRACT: Using conductive atomic force microscopy (cAFM), I-V characteristics on dot-like areas can be acquired to study current conduction mechanisms or dielectric breakdown statistics on the nanoscale. However, today such I-V measurements exhibit relatively low sensitivity. It is shown that parasitic capacitances Cpar in the pF range resulting from the cantilever of the probe and the probe holder limit the sensitivity of cAFM. This is proven by the evaluation of different voltage sweep rates sr and the analysis of the influence of measurement position on the sample for both, commercially available probes as well as shielded coplanar probes prepared by focused ion beam. Compared to standard probes, shielded probes show decreased displacement currents and nearly negligible transient effects for the I-V characteristics even at high sweep rates up to 10V/s. In addition, the influence of the measurement position is much less pronounced for the shielded probes. This means, the increase of Cpar (including the probe holder) when measuring in the center of a large sample compared to measuring at the edge of the sample is around 45% for the shielded probes compared to nearly 85% for standard probes. Here, a simple data evaluation procedure is proposed to correct the measured data for the displacement current, which will strongly improve the effective sensitivity of cAFM especially for high sr, which are preferred to decrease electrical stress during the measurement. However, for higher sr, noise increases and must be reduced in future cAFM systems by additional measures.
    Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 01/2013; 31:01A108. DOI:10.1116/1.4768679 · 1.36 Impact Factor
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    ABSTRACT: Scanning near-field optical microscopy (SNOM) aims at imaging nanostructured samples with sub-wavelength resolution. Tip-enhanced SNOM utilizes the strong local electromagnetic fields near a laser illuminated sharp metal tip to probe the near-field response of the sample. To achieve a clear image contrast, however, this near-field signal needs to exceed the background contribution resulting from simultaneous far-field excitation and far-field detection. For the resolution of tip-enhanced SNOM, the exact localization of the light emission plays a major role. In this work, the nearfield-to-far-field-ratio and the confinement of surface plasmon polaritons is improved for electrochemically etched conical gold tips by structuring them using multiple three-dimensional nanopatterning with a focused ion beam (FIB). For the first time, surface plasmon Bragg reflectors were fabricated all around the tip in a well-defined distance to the tip apex to mimic finite length antenna structures for which more efficient light confinement is expected. The design of the structures, the fabrication strategy, and the characterization of the resulting tips by scanning electron and optical microscopy is discussed. Photoluminescence spectra recorded before and after FIB modification indicate an increase of the light confinement of 60 %.
    Proceedings of SPIE - The International Society for Optical Engineering 09/2011; 8105:81050G. DOI:10.1117/12.893306 · 0.20 Impact Factor
  • J. D. Jambreck · V. Yanev · H. Schmitt · M. Rommel · A. J. Bauer · L. Frey
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    ABSTRACT: For electrical scanning probe microscopy (SPM) techniques, tips with low electrical resistance nearly not being affected by probe wear out are desirable. High aspect ratio metal tips can fulfill these requirements. Nanoimprinted metallic probe demonstrators were manufactured on metal coated cantilevers by using UV nanoimprint lithography with a UV-curing resist containing silver particles, focused ion beam processing, and a micro-manipulator. The probes manufactured in this manner were electrically characterized, used in a SPM system for measurements, and compared with conventional probes. SPM experiments were performed in scanning capacitance microscopy mode (SCM), tunneling atomic force microscopy mode (TUNA), and topography atomic force microscopy mode. The demonstrator probes show a resistance which is lower than that of diamond coated probes and higher than that of metal coated probes. For the demonstrators, SCM maps with higher signal-to-noise ratio compared with standard probes were obtained. TUNA maps and local TUNA I-V-curves showed comparable results for Pt/Ir coated probes and the demonstrator probes. In topography mode the demonstrator tips show higher resolution than diamond coated tips and than silicon tips with a thicker Pt/Ir coating and lower resolution than silicon tips with a thin Pt/Ir coating.
    Microelectronic Engineering 08/2011; 88(8):2584-2588. DOI:10.1016/j.mee.2010.12.022 · 1.20 Impact Factor
  • J.D. Jambreck · H. Schmitt · B. Amon · M. Rommel · A.J. Bauer · L. Frey
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    ABSTRACT: UV nanoimprint lithography (UV-NIL) is applied for the fabrication of metallic scanning probe microscopy (SPM) tips. The NIL templates are generated by focused ion beam (FIB) processing. The tips are imprinted by UV-NIL using a resist which is a mixture of Ag particles and an UV-curing polymer. After imprinting, tips are further shaped by FIB to achieve a high aspect ratio and a small radius at the apex. The resulting tips are analyzed and methods for increasing the metal-to-polymer ratio are presented and discussed.
    Microelectronic Engineering 05/2010; 87:1123-1126. DOI:10.1016/j.mee.2009.11.040 · 1.20 Impact Factor
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    ABSTRACT: Scanning probe microscopy techniques and, in particular, scanning spreading resistance microscopy (SSRM) were used for a detailed characterization of focused ion beam (FIB) induced damage in the surrounding of purposely irradiated areas on silicon. It is shown that the damaged area detected using these techniques extends up to several micrometers around the irradiated structures. The influence of the key FIB processing parameters on the FIB induced damage was examined. Parameters which were taken into account are the ion dose (from 10(12) to 10(18) cm(-2)), the milled structure size (circle diameters from 0.25 to 10 mu m), the beam energy (from 10 to 30 keV), and the beam current (from 1.5 to 280 pA). Moreover, the influence of the SSRM settings on the measurement results was investigated. Settings which were considered are the bias voltage and the force applied to the tip during the SSRM analysis. High resolution transmission electron microscopy and secondary ion mass spectroscopy analyses were performed to validate the SSRM results. Scattering between Ga ions and residual gas particles in the vacuum chamber of the FIB tool is identified as the main reason for the observed damaged area.
    Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 05/2010; 28:595-607. DOI:10.1116/1.3431085 · 1.36 Impact Factor
  • M. Rommel · J.D. Jambreck · C. Ebm · E. Platzgummer · A.J. Bauer · L. Frey
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    ABSTRACT: Today’s focused ion beam (FIB) systems enable the fast and flexible fabrication of 3D structures with dimensions well below 100 nm. Due to secondary effects like redeposition of sputtered material, however, the fabrication of a targeted shape of the structure is not simple at all. In this work, the influence of the patterning strategy during the sputtering on the shape of a 3D structure with rotational symmetry is studied. Highly different shapes of 3D structures are achieved only due to different rastering strategies or duration times of the ion beam at each raster pixel. The final structure shape can be properly modeled with IonShaper® simulations. These results clearly prove that the selection of the patterning strategy is the key for appropriate FIB processing of 3D structures. Besides, it is shown that unconventional patterning strategies might enable new types of 3D shapes.
    Microelectronic Engineering 05/2010; 87:1566-1568. DOI:10.1016/j.mee.2009.10.054 · 1.20 Impact Factor
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    ABSTRACT: We study the influence of the mechanical deformation induced by a surface acoustic wave (SAW) on the resonance frequency of a defect cavity in a 2D photonic crystal membrane. Using FDTD-simulations we determine the resonance frequency and quality factor of a nanocavity of a GaAs based structure with embedded InAs quantum dots. Under the influence of a SAW, we find a periodic modulation of the cavity resonance wavelength of Delta lambda > 2 nm accompanied by only a weak < 0.5x reduction of the Q-factor. Initial experiments for a SAW wavelength of similar to 1.8 mu m show a pronounced broadening of the time-integrated cavity emission line corresponding to a shift of >= 1 nm.
    Proceedings of SPIE - The International Society for Optical Engineering 01/2010; 7609(1):760908. DOI:10.1117/12.842710 · 0.20 Impact Factor