J Lin

Publications (2)0 Total impact

• Conference Proceeding: Method of increasing gate nitridation and its impact on CMOS devices

  V.P. Gopinath, V. Hornback, Y. Le, A. Kamath, L. Duong, J Lin, M.R. Mirabedini, W.C. Yeh
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  ABSTRACT: A process that combines shallow nitrogen implant with rapid thermal nitridation is shown to double the nitrogen content in ultra-thin oxynitrides for the same EOT. Implanted nitrogen acts as a second source of nitrogen during gate dielectric formation and amount of incorporated nitrogen is directly proportional to the implant dose. Nitridation is shown to have opposite effects on N and PMOS mobilities. PMOS mobilities show a continuous decrease with increasing gate nitrogen content. In addition, increasing nitridation leads to severe NBTI effect on PMOS devices. Therefore, a trade-off between boron penetration resistance and performance for PMOS transistors is indicated.
  Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on; 12/2003
• Conference Proceeding: Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides

  L. Duong, E Li, V. Gopinath, S. Prasad, J Lin, D. Pachura, V. Hornback
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  ABSTRACT: This work reports the effect of nitrogen incorporation on negative bias temperature instability (NBTI) of PMOS devices with 1.4 nm equivalent oxide thickness. It is found that for these ultra-thin oxynitrides, the linear threshold voltage degrades faster with higher content of nitrogen using both constant voltage and constant field methods.
  Integrated Reliability Workshop Final Report, 2003 IEEE International; 11/2003