J Hoffman

Publications (5)6.5 Total impact

• Source

  Available from: ac.il

  Article: Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3

  N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein
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  ABSTRACT: We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La _0.7 Ca _0.3 MnO ₃ (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.
  Journal of Applied Physics 08/2009; · 2.17 Impact Factor
• Source

  Available from: ArXiv

  Article: Magnetoresistance tensor of La_ {0.8} Sr_ {0.2} MnO_ {3}

  Y. Bason, J. Hoffman, C. H. Ahn, L. Klein
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  ABSTRACT: We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.
  Phys. Rev. B. 11/2008; 79(9).
• Source

  Available from: ph.biu.ac.il

  Article: Planar Hall effect in epitaxial thin films of magnetite

  Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, C. H. Ahn
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  ABSTRACT: We measured the planar Hall effect (PHE) of magnetite (Fe3O4) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications.
  Journal of Applied Physics 05/2007; 101(9):09J507-09J507-2. · 2.17 Impact Factor
• Source

  Available from: ph.biu.ac.il

  Article: Planar Hall-effect magnetic random access memory

  Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, C. H. Ahn
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  ABSTRACT: We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.
  Journal of Applied Physics 04/2006; 99(8):08R701-08R701-3. · 2.17 Impact Factor
• Source

  Available from: arxiv.org

  Article: Planar Hall Effect MRAM

  Y. Bason, L. Klein, J. -B. Yau, X. Hong, J Hoffman, C. H. Ahn
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  ABSTRACT: We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.
  10/2005;