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Conference Proceeding: Properties of tantalum silicate thin films prepared by metalorganic decomposition
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ABSTRACT: The aim of this paper is to study the properties of the Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub> thin films grown by MOD followed by rapid thermal annealing . The film is characterised by XRD, AFM and its electrical properties are studied.Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on; 12/2003
