ABSTRACT: Inner core levels and valence‐band structures of molecular‐beam epitaxy‐grown Al x Ga 1-x As alloys, AlAs/GaAs heterostructures and [(AlAs) 2 (GaAs) 2 ] n superlattices were investigated by photoemission measurements. The variations in accordance with the structures were observed for the valence bands, while the binding energies of inner core levels of all the structures are constant within ±0.1 eV. The minimum layer thickness of GaAs or AlAs necessary to show its peculiar band structure was found to be 5∼6 monolayers. The valence‐band offset between AlAs and GaAs was estimated to be 0.12±0.33 eV. The spectra for the valence bands of superlattices showed the different features from those of GaAs, AlAs, and AlGaAs alloys.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 12/1987; · 1.34 Impact Factor