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ABSTRACT: This paper reviews nonlinear quasi-phase-matching (QPM) waveguides
and laser diodes with application to conversion of infrared laser diode
wavelengths to the visible. The discussion of nonlinear QPM waveguides
includes Ti-diffusion poled and E-field poled LiNbO<sub>3</sub> and KTP
waveguides. Up to 25 mW of blue output power has been demonstrated for
120-mW infrared power injected into a nonlinear waveguide. Semiconductor
laser sources suitable for frequency doubling are discussed, including
distributed Bragg reflection (DBR) lasers operating at up to 200 mW
output power, master oscillator power amplifiers with over 1 W output
power, and wavelength-tunable flared semiconductor lasers with over 0.5
W output. A compact blue laser with 1-4 mW output power at 425-nm
wavelength has been demonstrated based on a DBR laser frequency doubled
in a nonlinear waveguide
IEEE Journal of Quantum Electronics 11/1997; · 1.88 Impact Factor
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ABSTRACT: Given the high data rates (>500 Mb/s) achievable in optical
links using current device technologies, low cost packaging of
transmitters and receivers plays a key role in rendering them viable for
short-haul data communication networks. The authors report a 12 channel,
fully digital, hybrid receiver module for a synchronous parallel optical
datalink operating at 622 Mb/s/channel. The use of a multichip module
(MCM) and the passive alignment of the MT-connectorized multimode ribbon
fiber to the photodetector array resulted in a simple low cost packaging
solution
IEEE Transactions on Components Packaging and Manufacturing Technology Part B 09/1996;
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ABSTRACT: This paper presents an analysis as well as experimental results on
developing receiver arrays for parallel digital datalinks for 10-100 m
in the Gb/s range. Interchannel crosstalk can be a dominant limiting
factor on the bit-error-rate in such parallel arrays. We present a novel
analysis of the physical origins of crosstalk arising from the
power-supply distribution, as well as an efficient circuit simulation
technique for the effect of crosstalk on digital signal transmission in
multichannel systems. It is shown that while differential receivers
exhibit a far lower crosstalk than single-ended ones, it is possible to
obtain low crosstalk values in the latter case by means of suitable
power supply decoupling. Experimental results in the form of two low
crosstalk multichannel receiver arrays are presented to corroborate the
theory
Journal of Lightwave Technology 08/1995; · 2.78 Impact Factor
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ABSTRACT: Parallel digital optical datalinks are desirable for high
throughput interconnects in advanced switching and computing systems.
Optical ribbon-fiber is the logical medium for such interconnections due
to its low interchannel skew, low loss, and compactness. We report a
de-coupled 12-channel registered synchronous optical receiver array
module for a parallel digital datalink at 622 Mb/s/channel
Electronic Components and Technology Conference, 1995. Proceedings., 45th; 06/1995
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ABSTRACT: Interchannel skew in graded index multimode fibre-optic ribbon can
be reduced by forming each channel from fibre sequentially cut from the
same pull. A 1.25 ps/m maximum variation in optical pulse delay has been
measured across a 102 m long 12 fibre ribbon. These improvements extend
the applications of multimode ribbon fibre to include low cost
synchronous parallel transmission at 622 Mbyte/s over distances greater
than 1 km
Electronics Letters 11/1994; · 0.96 Impact Factor
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ABSTRACT: The authors report a hybrid DC coupled 12 channel synchronous
optical receiver array for a parallel digital datalink at 622 Mbit/s.
Low interchannel crosstalk (<-40 dB) and low bit error rates (<10
<sup>-12</sup>) have been obtained with good decision phase margins
(330°) across all the channels
Electronics Letters 08/1994; · 0.96 Impact Factor
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ABSTRACT: A DC-coupled synchronous parallel optical data link operating at 1
Gbit/s per channel has been implemented using an array of low-threshold
strained InGaAs/GaAs single quantum well lasers with monolithically
integrated intracavity modulators. The bit error rate (BER) is less than
10<sup>-13</sup> for an input voltage swing of 800 mV at 1 bit/s. Phase
margins of 311 and 220° are obtained for a BER of 10<sup>-11</sup>
at 1 and 2 bit/s, respectively
Electronics Letters 08/1994; · 0.96 Impact Factor
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Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:; 08/1994
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Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:; 08/1994
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ABSTRACT: We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.< >
IEEE Photonics Technology Letters 07/1994; · 2.19 Impact Factor
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ABSTRACT: Low-threshold-current single-quantum-well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, a buried heterostructure laser with natural current blocking p-n-p-n junction is formed by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%) and high T/sub 0/ (150 K). High reflection coated laser (95%/95%) have CW threshold current as low as 0.28 mA.< >
IEEE Photonics Technology Letters 05/1994; · 2.19 Impact Factor
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ABSTRACT: A multichannel optical receiver with an In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector array and a monolithic transimpedance amplifier array fabricated in AlGaAs/GaAs HBT (heterojunction bipolar transistor) technology were demonstrated. Both flip-chip rear-illuminated and wire-bonded front-illuminated detector configurations were implemented. The transimpedance was 65 dB Omega , and the 3-dB bandwidth was measured to be 2.3 GHz. By using series feedback, the transimpedance gain of each cell was matched to within 0.5 dB, and the entire array operated from a single 5-V supply. A low interchannel crosstalk of less than -40 dB was measured up to a data rate of 2 Gb/s.< >
IEEE Photonics Technology Letters 01/1994; · 2.19 Impact Factor
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ABSTRACT: Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off switching ratio of 556 was obtained for a 30-mV change in absorber voltage. An optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. These results show a great improvement in the digital (on-off) switching performance of three-terminal lasers with intracavity modulators.< >
IEEE Photonics Technology Letters 04/1993; · 2.19 Impact Factor
