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ABSTRACT: In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal characteristics, and package. The FOM is derived based on the device theory, and its validity and usefulness are demonstrated with a practical design example.
IEEE Transactions on Electron Devices 02/2008; · 2.32 Impact Factor
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ABSTRACT: In high power high density converters, the power MOSFETs can be used in parallel as the main switch to meet the current rating requirement, increase the switching frequency, and reduce the power loss. This paper investigates the possible benefits and problems associated with the power MOSFETs paralleling operation for higher power high frequency applications. The conduction state current sharing and power loss are investigated considering the device junction temperature effect and conduction resistance mismatch. The switching transient current sharing is analyzed including the device parameters tolerance, power stage parasitic inductance and gate driving ability. A dynamic current sharing approach from the gate side is proposed. The experimental results indicate that the power MOSFETs can be paralleled with the proper gate driving design even if the device parameters are mismatched, and as a result the switching losses are significantly reduced
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE; 11/2006
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ABSTRACT: This paper develops a high efficiency gate driver for high power MOSFET modules with large input gate capacitance that includes several paralleling power MOSFET chips inside. The power MOSFET module is used in the high frequency, high power converter to achieve high power density. The conventional gate driver with gate resistor consumes huge power that results in the bulky gate resistor and needs large DC power supply to provide the power loss. In order to reduce the power loss and volume, a novel self-powered resonant gate driver is proposed which operates at wide switching frequency from hundreds of Hz to hundreds of kHz. The driver gets energy from the power bus. The additional driver supply is saved. A ten-fold power loss reduction is achieved compared to the resistive gate driver. This paper contains a description and analysis of the self-powered resonant gate driver and the optimum condition for its operation. The technical data for the built gate driver is also described. The lab prototype and test results are presented.
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE; 04/2006
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ABSTRACT: High voltage IGBTs have limited switching capabilities with maximum switching frequency lower than 2 kHz, primarily due to their high switching losses. Similar situation is true for other high voltage silicon bipolar power switches. On the other hand, lower voltage IGBTs can operate at much higher switching frequencies. However, these IGBT'S voltage rating does not match the need for many high voltage applications. This paper discusses the design and development of a 4800 V, 300 A, 10 kHz scalable power semiconductor switch (SPSS) based on series connecting IGBTs. The static and dynamic voltage balance between IGBTs are achieved using active clamp circuit and active gate control. The developed SPSS derives its control power directly from the main power bus. From a user's standpoint, the SPSS is a three terminal optically controlled high-power switch.
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE; 04/2005
