F. Ichikawa

Publications (2)0 Total impact

• Conference Proceeding: Accurate characterization of gate-N- overlapped LDD with the new Leff extraction method

  J. Ida, S. Ishii, F. Ichikawa
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  ABSTRACT: Accurate characterization of the gate-N^- overlapped LDD (lightly doped drain) is carried out, based on the newly extracted L _eff which corresponds to the metallurgical channel length. Current drive improvement of the overlapped LDD over the conventional LDD is not so large as expected when the comparison is based on the same metallurgical channel length. Gate-source/drain overlap capacitance calculated from the newly extracted overlap length is useful for accurate analysis of propagation delay. It is shown that the current drive improvement of the overlapped LDD does not overcome the increase of the overlap capacitance and that the propagation delay of the inverter with overlapped LDD is larger than that of the conventional LDD, when these two LDDs are optimized for hot carrier reliability
  Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International; 01/1991
• Conference Proceeding: A new extraction method for effective channel length on lightly doped drain MOSFET's

  J. Ida, A. Kita, F. Ichikawa
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  ABSTRACT: An extraction method for an effective channel length ( L _eff) on lightly doped drain (LDD) MOSFETs is proposed. In the method, the L _eff is obtained by the linear extrapolation of the gate-bias-dependent L _eff to the threshold voltage. In order to clear the difference of the gate bias dependence of the L _eff among various LDD structures, the LDDs are examined with experiments and simulations. The L _eff of LDDs corresponds to the metallurgical length. It is shown that MOSFET parameters can be reasonably characterized when the L _eff obtained by the method is used
  Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on; 04/1990