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Publications (7)10.91 Total impact

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    ABSTRACT: A simple diffusion barrier technology for polycide gate electrodes is presented. An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas and without substrate heating. The silicon nitride layer acts as an excellent barrier to impurity diffusion from polysilicon to silicide. It was found that barrier formation with ECR nitrogen plasma results in no fatal degradation in the MOS interface characteristics. This technology is very effective for making dual polycide gates inexpensively due to its simplicity and a good affinity with conventional ULSI fabrication processes
    IEEE Transactions on Electron Devices 01/1996; · 2.06 Impact Factor
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    ABSTRACT: A simple technique for cleaning a silicon surface after contact hole etching is proposed for obtaining stable p<sup>+</sup> silicon contact characteristics for very large scale integrated interconnections. The contaminated layer of the silicon contact surface after dry etching is first oxidized with electron cyclotron resonance (ECR) oxygen plasma and then the surface oxide is removed by wet etching with diluted HF. X‐ray photoemission spectroscopy and secondary‐ion‐mass spectroscopy analyses show that one of the main reasons for the instability of the p<sup>+</sup> silicon contact is fluorine contamination, which can be removed controllably by ECR oxygen plasma treatment followed by wet etching. This surface oxidation technique with ECR oxygen plasma is, therefore, an effective way to obtain stable and low‐resistance p<sup>+</sup> contact characteristics. © 1995 American Vacuum Society
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 06/1995; · 1.36 Impact Factor
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    ABSTRACT: An extremely thin SiN film formed with electron cyclotron resonance (ECR) nitrogen plasma has been measured by x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), ellipsometry, and electron spin resonance (ESR). The XPS and AES results show that the SiN layer is easily formed on a silicon surface by ECR nitrogen plasma, and it has a structure with high nitrogen content similar to Si 3 N 4 only near the surface of the film. The ellipsometry and ESR results reveal that the SiN film is very thin, 2.5–4.0 nm, and has spin density in the order of 10<sup>13</sup> cm<sup>-2</sup>, which is reduced drastically by exposing it to hydrogen plasma. The SiN film can be applied to the inexpensive dual‐polycide‐gate complementary metal–oxide–semiconductor process. © 1995 American Vacuum Society
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 06/1995; · 1.36 Impact Factor
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    ABSTRACT: A technique to reduce charge buildup causing gate-oxide deterioration during biased electron cyclotron resonance (ECR) plasma deposition has been developed. For SiOâ planarization and filling techniques, it is necessary to resolve the charge build-up phenomenon with the biased ECR plasma system. The deterioration is reduced by adjusting the magnet-coil position in the ECR plasma system which means minimizing the magnetic-flux density at the specimen surface. 15 refs., 9 figs.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/1995; 13(5):2004-2007. · 1.36 Impact Factor
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    ABSTRACT: A simple method for estimating charge buildup on gate oxide during plasma processing is proposed. This method is based on the observation that metal oxidation rate at the SiO2–metal interface is accelerated by the electric field formed by electrons diffused from the SiO2 surface to the metal surface during plasma processing. The thickness of the metal oxide caused by electron‐induced charge buildup can be estimated by ellipsometry analysis. We applied the method to biased electron cyclotron resonance (ECR) plasma deposition of SiO2, compared the metal oxidation enhancement for biased ECR plasma deposition with that for exposing electron beams directly and also compared with the injected charge density Qinj for gate–oxide breakdown during biased ECR plasma deposition evaluated by time‐dependent dielectrics breakdown measurements. In this way, we clarify that (i) the oxidation enhancement takes place at an electron‐beam exposure of over 10 C/cm2, and (ii) the Qinj of over 10 C/cm2 is closely related to gate–oxide breakdown. These results confirm that the metal–oxide thickness is strongly associated with the degradation in gate–oxide yield related to the injected electrons and that the charge buildup damage is caused by electrons diffused during biased ECR plasma deposition. © 1995 American Vacuum Society
    Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 01/1995; 13(3):889-894. · 1.36 Impact Factor
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    ABSTRACT: This paper describes the fabrication process and the reliable characteristics of a metal–insulator–metal capacitor using electron cyclotron resonance plasma‐SiO2 as an insulator film. The metal–insulator–metal capacitors are additionally fabricated during the Al multilevel interconnection process since the deposition temperature of electron cyclotron resonance plasma‐SiO2 is below 200 °C. Also, the leakage current characteristics of the film are excellent even without densification at high temperature. The experimental results confirm that a metal–insulator–metal capacitor fabrication process using electron cyclotron resonance plasma‐SiO2 can be applied to analog large scale integration implementation. © 1995 American Vacuum Society
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 01/1995; 13(5):2013-2015. · 1.36 Impact Factor
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    ABSTRACT: Water-related hot-carrier degradation is reduced by using ECR plasma-SiO<sub>2</sub> as the water-blocking layer under the water-containing films such as SOG or TEOS-O<sub>3</sub>. A water-blocking mechanism is proposed, based upon the reaction between Si-H bonds and H<sub>2</sub>O in ECR-SiO<sub>2</sub> film. Hot-carrier degradation is reduced as SiH<sub>4</sub>/O<sub>2</sub> gas flow ratios (α) are increased during ECR-SiO<sub>2</sub> deposition. Degradation does not occur when α&ges;0.69. The Si-H bond concentration in ECR-SiO<sub>2</sub> film increases as α increases. In water-containing SOG film covered with ECR-SiO<sub>2</sub>, the amount of petrology desorbed increases as α increases, while the amount of water desorbed decreases. These results confirm that the water-blocking ability of ECR-SiO<sub>2</sub> is caused by water decomposition resulting from the reaction between Si-H bonds and H-O in ECR-SiO<sub>2</sub>
    IEEE Transactions on Electron Devices 06/1994; · 2.06 Impact Factor