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ABSTRACT: We have demonstrated a high performance 80nm gate In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs<sub>0.3</sub>P<sub>0.7</sub> composite channel HEMT. The device has a g<sub>m</sub> as high as 1 S/mm and an f<sub>T</sub> 280 GHz. To complete this study, the noise and power performance of such device will be further studied and compared with conventional InGaAs channel devices in near future.
Semiconductor Device Research Symposium, 2007 International; 01/2008
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ABSTRACT: An In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs<sub>0.3</sub>P<sub>0.7</sub> composite channel high electron mobility transistor (HEMT) structure was grown by molecular beam epitaxy. Room-temperature Hall measurement showed that the device wafer had an electron mobility of 7300 cm<sup>2</sup>/V s and a sheet electron density of 3×10<sup>12</sup> cm<sup>-2</sup>. The fabricated HEMT devices with a gate length of 0.25 μm exhibited excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, a cutoff frequency (f<sub>T</sub>) of 115 GHz, and a maximum frequency of oscillation of 137 GHz. This is believed to be the first report of InGaAs/InAsP composite channel HEMTs. The f<sub>T</sub> is the highest ever reported for any composite channel HEMTs with the same gate length.
Electronics Letters 04/2006; · 0.96 Impact Factor
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ABSTRACT: In this paper we report growth, fabrication and characterization of In<sub>0.52</sub>Al<sub>0.4</sub>sAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs<sub>0.3</sub>P<sub>0.7</sub> composite channel HEMTs with a gate length of 0.25 μm. In comparison with InAlAs/InGaAs/InP composite channel HEMTs, these devices have better band structure for transferring electrons to the composite channel under high electric field, thus exhibit excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, an f<sub>T</sub> of 115 GHz, and an f<sub>max</sub> of 137 GHz. To our knowledge, this is the first report of InAlAs/InGaAs/InAsP composite channel HEMTs. The f<sub>T</sub> is the highest ever reported for any composite channel HEMTs with the same gate length.
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings; 01/2006
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ABSTRACT: Self-aligned T-gate AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a sapphire substrate using a thin Ti/Al/Ti/Au ohmic layer. To suppress the gate leakage current, the ohmic contact annealing was performed in a furnace. The self-aligned HEMTs with 0.25 μm gate length and 100 μm width exhibit good pinch-off characteristics, a transconductance of 146 mS/mm, an extrinsic unity current gain cutoff frequency of 38 GHz and a maximum oscillation frequency of 130 GHz.
Electronics Letters 10/2004; · 0.96 Impact Factor
