D Su

Publications (2)0 Total impact

• Source

  Available from: nthu.edu.tw

  Conference Proceeding: The effect of CF4 plasma on the device parameters and reliability properties of 0.18 μm MOSFETs

  R.C.J. Wang, J.R. Shih, L.H. Chu, K.Y.Y. Doong, L.S. Wang, P.C. Weil, D.S. Su, C.T. Yang, C.C. Chiu, D. Su, Y.K. Peng, J.T. Yue, J.Y.M. Lee
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  ABSTRACT: As the device geometry continued to be scaled toward deep sub-micron, high dose ion implantation was essential in the source/drain engineering for semiconductor device fabrication. However, carbonized photoresist residuals became a critical issue in the photoresist stripping step of high dose ion implantation process. In order to remove photoresist residuals effectively and completely, a fluorine-based gas such as CF₄ was widely used in photoresist ashing applications. A non-optimized CF₄ ashing recipe would cause fluorine penetration into the gate oxide and affect device parameters. In this work, ashing recipes with different CF₄ plasma processing times were used in the source/drain photoresist stripping process to evaluate its influence. Results of this experiment showed that longer CF₄ plasma processing time gave rise to more gate oxide thickness, higher threshold voltage, negative shift of flatband voltage, good immunity to hot carrier injection (HCI) stress and improved negative bias threshold instability (NBTI). In addition, oxide integrity degradation in charge-to-breakdown (Q_bd) was observed.
  Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the; 02/2002
• Conference Proceeding: Stress-induced voiding and its geometry dependency characterization

  K.Y.Y. Doong, R.C.J. Wang, S.C. Lin, L.J. Hung, C.C. Chiu, D. Su, K. Wu, K.L. Young, Y.K. Peng
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  ABSTRACT: Stress induced voiding (SIV) is explored from the aspects of design attribute and geometry parameters. Two kinds of test structures were used to evaluate resistance change in relation to reliability and to understand the SIV mechanism. Thus, a reliability-robustness guideline from a consideration of geometry configuration can be derived.
  Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International;