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ABSTRACT: Using different SiGe technologies, integrated circuits have been
designed to realize electronic processing functions for 10 Gbit/s and 40
Gbit/s optical transmission systems. Experimental results of several
mounted chips are presented
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on; 08/1999
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ABSTRACT: A 1:4-demultiplexer IC meeting the essential requirements for
lightwave communication systems has been designed based on a 21 GHz f
<sub>T</sub> 0.4 μm Si bipolar process. The circuit provides features
such as bit-rotation control, clock enable control, outputs aligned in
time, and phase aligner for clock signals. It operates up to 14 Gb/s (14
GHz) with a phase margin of ⩾250°. The power consumption is 2 W
with a -4.5 V supply. 1:16-demultiplexer operation is demonstrated on
the basis of 1:4-demultiplexer IC's at 10 Gb/s
IEEE Journal of Solid-State Circuits 02/1996; · 3.23 Impact Factor
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ABSTRACT: The 4:1-multiplexer reported here is based on a 21 GHz f<sub>T
</sub> 0.4 μm silicon bipolar technology and operates up to 12 Gb/s.
For facilitating system applications, the input signals are aligned in
phase and retiming of the output signal is provided. A phase control
circuit permits the choice of the optimum clock phase for the first and
the second multiplexer stages; an internal delay line is not necessary.
The 4:1-multiplexer consumes about 1.8 W with a single supply voltage of
-4.5 V
IEEE Journal of Solid-State Circuits 03/1995; · 3.23 Impact Factor
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ABSTRACT: A 1:4-demultiplexer IC meeting the essential requirements for
lightwave communication systems, has been designed based on a 21 GHz f
<sub>T</sub> 0.4 μm Si bipolar process. It operates up to 14 Gb/s (14
GHz) with a phase margin of 250°. The power consumption is 2 W with
a -4.5 V supply
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994; 11/1994
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ABSTRACT: A 1:16-demultiplexer based on silicon bipolar 1:4-demultiplexer
ICs, which include all requirements for system applications, has been
designed and tested. The authors report the design of the
1:4-demultiplexer, which operates up to 14 Gbit/s, and experimental
results for the 1:16-demultiplexer at 10 Gbit/s
Electronics Letters 08/1994; · 0.96 Impact Factor
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ABSTRACT: A special decision circuit with dual threshold detection and
memory has been realised for 10 Gbit/s operation as an integrated
circuit using a silicon bipolar technology. The circuit can be used for
signal regeneration in conjunction with the method of dispersion
supported transmission
Electronics Letters 04/1994; · 0.96 Impact Factor
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ABSTRACT: This paper presents a 20-Gb/s 1:4-demultiplexer for future
fiber-optic transmission systems. It uses an 0.4-μm emitter double
polysilicon 21-GHz f<sub>T</sub> Si bipolar foundry process. This is the
highest data rate of a 1:4-DEMUX reported so far in any technology. The
1:4-DEMUX features a tree-type architecture with one frequency divider
and a channel switch circuit. The circuit design was carefully optimized
to achieve high speed and moderate power dissipation. It consumes 1.4 W
with a single -4.5-V supply
Journal of Lightwave Technology 03/1994; · 2.78 Impact Factor
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ABSTRACT: An optical receiver and regenerator for 10 Gbit/s rate is presented, which is entirely equipped with silicon bipolar circuits. In the system experiment the performance of this receiver was verified by repeaterless transmission over 125.8km of standard singlemode fibre with the method of dispersion supported transmission.
Electronics Letters 12/1993; · 0.96 Impact Factor
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ABSTRACT: A silicon bipolar 1:4-demultiplexer IC is presented which can be operated up to approximately 12.5 Gbit/s. The channels are aligned to the outputs by two external control signals. The 370 transistor chip was fabricated with an 0.4 mu m emitter double polysilicon 21 GHz f<sub>T</sub> Si bipolar process and consumes approximately 1.9 W.
Electronics Letters 12/1992; · 0.96 Impact Factor
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ABSTRACT: Optical transmission experiments performed at 2.24 Gb/s using
standard single-mode fiber with dispersion zero at 1.3 μm are
discussed. In the optical transmitter, a 1.5-μm-wavelength
distributed feedback laser is directly modulated by means of a special
electrical drive pulse shaping technique. A link length of up to 151 km
is bridged. This is the longest repeater distance at 2 Gb/s using direct
detection without optical amplifiers reported so far. Moreover, the
transmission system includes multiplexing and demultiplexing equipment
using specially developed high-speed silicon integrated circuits. The
whole system is assembled in a version suitable for field trial
applications
Journal of Lightwave Technology 03/1990; · 2.78 Impact Factor
