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ABSTRACT: We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated by inductive Ohmic behavior and Poole–Frenkel effect, respectively. However, the conductions of on- and off-states in bipolar switching follow capacitive Ohmic behavior and Schottky effect, respectively. Therefore, we infer that the mechanisms of the unipolar and bipolar switching behaviors in NiO films are related with changes in bulk-limited filamentary conduction and interfacial Schottky barrier, respectively.
Applied Physics Letters 07/2009; 95(2):022109-022109-3. · 3.84 Impact Factor
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ABSTRACT: The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and NH3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and NH3 were less than those observed for the nitrided film prepared by thermal annealing in only NH3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.
Applied Physics Letters 07/2008; 93(1):012901-012901-3. · 3.84 Impact Factor
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Japanese Journal of Applied Physics 03/2008; · 1.06 Impact Factor
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S.-E. Ahn,
M.-J. Lee,
Y. Park,
B. S. Kang,
C. B. Lee,
K. H. Kim,
S. Seo,
D.-S. Suh, D.-C. Kim,
J. Hur,
W. Xianyu,
G. Stefanovich,
H. Yin,
I.-K. Yoo,
J.-H. Lee,
J.-B. Park,
I.-G. Baek,
B. H. Park
Advanced Materials 02/2008; 20(5):924 - 928. · 13.88 Impact Factor
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ABSTRACT: During Ocean Drilling Program Leg 138, eleven sites were drilled. The sediments recovered are mainly composed of carbonate-rich pelagic ooze including minor diatom and radiolarian ooze. Average carbonate contents of Sites 846 and 850 are about 59% and 75%, respectively. The porosity and velocity measured in laboratory were corrected to in situ condition using empirical equation (Hamilton, 197612.
Hamilton , E. L. 1976 . Variations of density and porosity with depth in deep-sea sediments . J. Sed. Pet. 46 : 280 – 300 . View all references) and delta velocity (log value-laboratory value). The corrected laboratory porosity matches well with logging data, but it is deviating in the intervals of low carbonate content. The correlation between log porosity and the corrected porosity shows a similar trend. Depth profiles between the corrected velocity and logging data do not agree in the intervals of low carbonate content, but the intervals characterized by high carbonate content are relatively matched. This suggests that Hamilton's equation is not appropriate for diatom-rich sediments. The correlation between log velocity and the corrected velocity is also a much better fit than that of laboratory velocity. In addition, the relationship between velocity and porosity is a better fit using corrected data than uncorrected data. Thus, mechanical rebound correction needs to interpret laboratory data to in situ condition. However, the magnitude of rebound by the removal of overburden pressure should be carefully considered because the rebound depends on sediment types.
Marine Georesources and Geotechnology 01/2008; 26(1):51-65. · 0.36 Impact Factor
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ABSTRACT: Epitaxial NiO films have been fabricated on SrRuO3 films prepared on SrTiO3 single-crystal substrates. The x-ray diffraction spectra and transmission electron microscopy confirm the epitaxial growth of NiO with atomically flat surfaces on the SRO electrode. The I-V measurements of epitaxial NiO show the resistive memory switching behavior with a change in the polarity of the voltage bias, in contrast with the switching behavior of polycrystalline NiO by a single polarity. The I-V characteristics of epitaxial NiO prepared under various synthesis conditions and electrodes are presented, which suggests an important role of interfaces between NiO and electrodes on the resistive switching behavior.
Applied Physics Letters 11/2007; 91(20):202115-202115-3. · 3.84 Impact Factor
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M.-J. Lee,
Y. Park,
D.-S. Suh,
E.-H. Lee,
S. Seo, D.-C. Kim,
R. Jung,
B.-S. Kang,
S.-E. Ahn,
C. B. Lee,
D. H. Seo,
Y.-K. Cha,
I.-K. Yoo,
J.-S. Kim,
B. H. Park
Advanced Materials 11/2007; 19(22):3919 - 3923. · 13.88 Impact Factor
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Journal- Korean Physical Society 10/2007; · 0.45 Impact Factor
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ABSTRACT: This paper reports the reliability characteristics of poly gated n-MOSFETs with HfSiON and SiON gate dielectrics in both thin and thick oxide of dual gate oxide scheme. Hot carrier stress (HCS) at Isub, max condition on thick oxide is found to be the most critical part among the various reliability concerns. Regardless of gate dielectric and gate oxide thickness, the degradation behavior of the condition of Isub, max and Vg=Vd HCS is mainly SS increase and Vth shift, respectively. Therefore, for precise evaluation of the device reliability, it is necessary that HC immunity at Isub, max stress should be checked in thick oxide transistor below 50 nm design rule era.
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international; 05/2007
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D C Kim,
S Seo,
S Suh,
R Jung,
C W Lee,
J K Shin,
I K Yoo,
I G Baek,
H J Kim,
E K Yim, [......],
R Lee,
H J Yim,
E K Lee,
D.-S Suh,
H S Kim,
U-In Chung,
J T Moon,
B I Ryu,
J.-S Kim,
B H Park
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ABSTRACT: Experimental investigations on the resistive memory switching in sub-micron sized NiO memory cell are presented to elucidate the resistive memory switching mecha-nism. The voltage or current-biased I-V measurements show that the resistive switching transitions can be regarded as the combination of a voltage-controlled negative differ-ential resistance phenomenon and a current-controlled negative differential resistance phenomenon. Along with experimental observations of multiple resistance states, these indicate that the memory switching in NiO would come from the percolative formation and rupture of filamentary conducting paths. Pulse experiments further suggest that the memory switching would come from local domains inside filaments.
Integrated Ferroelectrics 01/2007; 93:90-97. · 0.30 Impact Factor
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M.-J. Lee,
S. Seo, D.-C. Kim,
S.-E. Ahn,
D. H. Seo,
I.-K. Yoo,
I.-G. Baek,
D.-S. Kim,
I.-S. Byun,
S.-H. Kim,
I.-R. Hwang,
J.-S. Kim,
S.-H. Jeon,
B. H. Park
Advanced Materials 12/2006; 19(1):73 - 76. · 13.88 Impact Factor
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D. C. Kim,
M. J. Lee,
S. E. Ahn,
S. Seo,
J. C. Park,
I. K. Yoo,
I. G. Baek,
H. J. Kim,
E. K. Yim,
J. E. Lee,
S. O. Park,
H. S. Kim,
U-In Chung,
J. T. Moon,
B. I. Ryu
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ABSTRACT: For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin IrO2 layers between NiO and electrodes. The role of thin IrO2 layers on NiO growth and memory switching stabilization are discussed.
Applied Physics Letters 06/2006; 88(23):232106-232106-3. · 3.84 Impact Factor
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D. C. Kim,
S. Seo,
S. E. Ahn,
D.-S. Suh,
M. J. Lee,
B.-H. Park,
I. K. Yoo,
I. G. Baek,
H.-J. Kim,
E. K. Yim,
J. E. Lee,
S. O. Park,
H. S. Kim,
U-In Chung,
J. T. Moon,
B. I. Ryu
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ABSTRACT: Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.
Applied Physics Letters 06/2006; · 3.84 Impact Factor
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I.G. Baek, D.C. Kim,
M.J. Lee,
H.-J. Kim,
E.K. Yim,
M.S. Lee,
J.E. Lee,
S.E. Ahn,
S. Seo,
J.H. Lee,
J.C. Park,
Y.K. Cha,
S.O. Park,
H.S. Kim,
I.K. Yoo,
U-In Chung,
J.T. Moon,
B.I. Ryu
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ABSTRACT: Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006
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S. Seo,
M. J. Lee, D. C. Kim,
S. E. Ahn,
B.-H Park,
Y. S. Kim,
I. K. Yoo,
I. S. Byun,
I. R. Hwang,
S. H. Kim,
J.-S. Kim,
J. S. Choi,
J. H. Lee,
S. H. Jeon,
S. H. Hong
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ABSTRACT: We investigated resistance switching in top-electrode/ Ni O / Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt / Ni O / Pt and Au / Ni O / Pt structures with ohmic contacts, the effective electric field inside the film was high enough to induce trapping or detrapping at defect states and thus resistance switching. For a Ti / Ni O / Pt structure with well-defined Schottky contact at Ti / Ni O interface accompanied by an appreciable voltage drop, the effective electric field inside the NiO film was not enough to induce resistance switching. For an Al / Ni O / Pt structure with a low Schottky barrier at the Al / Ni O interface, resistance switching could be induced at a higher voltage since the voltage drop at the Al / Ni O interface was not negligible but small.
Applied Physics Letters 01/2006; · 3.84 Impact Factor
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S. Choi,
B.Y. Nam,
J.-H. Ku,
D.C. Kim,
S.H. Lee,
J.J. Lee,
J.W. Lee,
J.D. Ryu,
S.J. Heo,
J.K. Cho, [......],
C.J. Choi,
Y.J. Lee,
J.H. Chung, B.H. Kim,
M.B. Lee,
G.H. Choi,
Y.S. Kim,
K. Fujihara,
U.I. Chung,
J.T. Moon
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ABSTRACT: Sub-100 nm DRAM is successfully fabricated for the first time with several key technologies, including W/W<sub>x</sub>N-poly gate, bitline structure having low parasitic capacitance, Ru/Ta<sub>2</sub>O<sub>5</sub>/poly-Si capacitor and advanced CVD-Al contact processes. A fully functional working device is obtained with promising cell performance. Each technology also shows its extendibility as a manufacturable module process for further scaled DRAM.
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on; 02/2002
