Che-Hung Lin

National Cheng Kung University, Tainan, Taiwan, Taiwan

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Publications (19)22.56 Total impact

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    ABSTRACT: An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Omega input and output impedance. Based on a 0.35 mum gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.
    IEEE Microwave and Wireless Components Letters 11/2008; · 1.78 Impact Factor
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    ABSTRACT: A novel and compact 16-44 GHz ultra-broadband doubly balanced monolithic ring mixer for Ku- to Ka-band applications implemented with a 0.15-mum pHEMT process is presented. The proposed mixer is composed of a C-band miniature spiral balun and a 180deg hybrid formed with an interdigital coupler, a low-pass pi-network, and a high-pass T-network. The 180deg hybrid eliminates the use of a cross-over structure for application in the balanced mixer, as well as provides an output port for the RF extraction of up-converter application. This proposed configuration leads to a die size of less than 0.8times0.8 mm<sup>2</sup> . From the measured results, the mixer exhibits an 11-14 dB conversion loss, a 27-50 dB high LO-to-IF isolation over 16-44 GHz RF/LO bandwidth, and a 1-dB compression power of 14 dBm for both down- and up-converter applications.
    IEEE Microwave and Wireless Components Letters 10/2008; · 1.78 Impact Factor
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    ABSTRACT: A novel configuration of doubly balanced mixer is presented for operating over the 26-38 GHz band. The monolithic microwave integrated circuit (MMIC) was implemented by GaAs 0.15 mum pHEMT technology with the compact size of 1times2.5 mm<sup>2</sup>. A 180deg hybrid circuit and two identical Marchand baluns were employed to achieve good port-to-port isolation. They also have wide band performance, make the mixer more compact, and simplify IF extraction. This mixer has a conversion loss of better than 6 dB, a dc-10 GHz IF bandwidth, and the LO-to-RF and LO-to-IF isolations are better than 20 dB and 29 dB, respectively.
    IEEE Microwave and Wireless Components Letters 10/2008; · 1.78 Impact Factor
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    ABSTRACT: A compact Ka-band doubly balanced diode mixer with new phase relationships is demonstrated. In this design, a novel configuration was employed to have good performance while keeping compact size and simple intermediate frequency (IF) extraction. It is flexible not only in layout design, but also in the reduction of IF inductance. The chip dimension is as small as 0.851.35 mm, implemented by using a 0.15 m PHEMT technology. This mixer has a conversion loss between 9 to 12 dB, a dc-3.5 GHz IF bandwidth, and a good port-to-port isolation in Ka band.
    IEEE Microwave and Wireless Components Letters 08/2008; · 1.78 Impact Factor
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    ABSTRACT: A novel configuration of double- balanced sub-harmonic mixer using a ring connected anti-parallel diode pair (RAPDP) is presented for operating in 26-30 GHz. The monolithic microwave integrated circuit (MMIC) was implemented with GaAs 0.15 mum PHEMT technology with the compact size of 0.85 x 0.85 mm<sup>2</sup>. The proposed mixer consists of two spiral transformer baluns and a band-reject filter. The RF spiral balun with a band-reject filter served by an L-C resonator is used to provide an output port for the IF extraction. The best conversion loss of the sub-harmonic mixer is 12.7 dB and LO-to-RF and LO-to-IF isolations are better than 24 dB and 28 dB respectively.
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on; 01/2008
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    ABSTRACT: A Ka-band planar three-way power divider which uses the coupled line instead of the transmission line is proposed to reduce chip size. The proposed planar topology, different from the conventional Wilkinson power divider, is analyzed and can provide not only compact but also dc block characteristics, which are very suitable for monolithic microwave integrated circuit applications. The divider implemented by a pHEMT process shows an insertion loss less than 5.1 dB and an output isolation better than 17 dB. A return loss less than 18 dB and a phase difference of 4.2deg at 30 GHz can be achieved. Finally, good agreements between the simulation and experimental results are shown.
    IEEE Microwave and Wireless Components Letters 01/2008; · 1.78 Impact Factor
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    ABSTRACT: A variable conversion gain star mixer for Ka-band applications has been presented. This monolithic microwave integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor process with a chip size of 1.7times1.7 mm<sup>2</sup>. The mixer is modified from conventional star mixer to apply dc bias. The conversion gain of the mixer, controlled by the voltage of the diodes, could be applied to meet gain compensation requirements in communication systems. From the measured results, the circuit can provide 11.9 dB conversion gain and 9.3 dB gain adjustment by controlling voltage from 0 to 0.7 V at 30 GHz.
    IEEE Microwave and Wireless Components Letters 12/2007; · 1.78 Impact Factor
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    ABSTRACT: A novel 12-40 GHz ultra-broadband doubly balanced monolithic ring mixer with a small chip size covering the Ku- to Ka-band applications implemented by a 0.15-mum pseudo- morphic high electron-mobility transistor process is presented. The proposed mixer consists of two spiral transformer baluns and a band-reject filter. The use of the spiral baluns leads to the achievement of a chip size less than 0.8 times 0.8 mm<sup>2</sup>. The radio frequency (RF) spiral balun with a band-reject filter served by an L-C resonator is used to improve the bandwidth of the mixer and to provide an output port for the intermediate frequency (IF) extraction as well. The mixer exhibits a 6-12 dB conversion loss, high isolation over 12-40 GHz RF/local oscillation bandwidth, a DC-8 GHz IF bandwidth, and a 1-dB compression power of 14 dBm for both down- and up-converter applications.
    IEEE Microwave and Wireless Components Letters 11/2007; · 1.78 Impact Factor
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    ABSTRACT: A novel configuration of subharmonic mixer using an anti-parallel diode pair is presented for operating over the 23-37 GHz band. The monolithic microwave integrated circuit is implemented by GaAs 0.15 mum PHEMT technology with the compact size of 0.85 times 0.85 mm<sup>2</sup>. This mixer employs a directional coupler, LC low-pass filter, and a short stub for isolating three ports corresponding to radio frequency (RF), local oscillation (LO) input, and intermediate frequency (IF) output ports. The directional coupler also provides impedance transformation between the diode pair, RF, and LO ports. This makes the subharmonic mixer more compact and flexible. The best conversion loss of the subharmonic mixer is 9.4 dB, and the LO-to-RF and LO-to-IF isolations are better than 22 and 31 dB, respectively.
    IEEE Microwave and Wireless Components Letters 10/2007; · 1.78 Impact Factor
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    ABSTRACT: A single-balanced mixer for operation in the microwave- and millimeter-wave bands is presented. This monolithic microwave-integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor process with a chip size of 2.11 × 1.54 mm2. This mixer employs a planar Marchand balun and a low-pass filter for isolating three ports corresponding to RF, LO, and IF ports. The best upconversion loss is 8 dB with an LO-to-RF isolation better than 30 dB. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2692–2694, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22884
    Microwave and Optical Technology Letters 08/2007; 49(11):2692 - 2694. · 0.59 Impact Factor
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    ABSTRACT: This paper presents a compact X-band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate-length power PHEMT technology, a two-stage power amplifier is fabricated on a 3-mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small-signal gain, an average of 9 W continuous-wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102
    Microwave and Optical Technology Letters 12/2006; 49(2):257 - 261. · 0.59 Impact Factor
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    ABSTRACT: A fully matched, 2-W high linearity amplifier monolithic microwave integrated circuit, by using quasi-enhancement mode technology of AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors, is demonstrated for wireless local area network applications. At Vgs= 0 V, V<sub>ds</sub>= 5 V, this power amplifier has achieved 14-dB small-signal gain, 33-dBm output power at 1-dB gain compression point, and 34.5-dBm saturated output power with 35% power added efficiency at 5.8 GHz. Moreover, high-linearity with 45.2-dBm third-order intercept point is also achieved
    IEEE Microwave and Wireless Components Letters 12/2006; · 1.78 Impact Factor
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    ABSTRACT: A 26-38 GHz monolithic doubly balanced mixer is presented. In this design, a novel configuration was employed to have wide band performance while keeping compact size and simple IF extraction. The MMIC was implemented with WIN 0.15 mum PHEMT process and the chip size is 1 times 2.5 mm<sup>2</sup>. This mixer has a conversion loss of better than 6 dB with good port-to-port isolation and a DC-10 GHz IF bandwidth
    Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE; 12/2006
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    ABSTRACT: This paper describes the design and measured performance of a single-balanced mixer using a planar Marchand balun for operation in the microwave and millimeter-wave bands. The MMIC was fabricated on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 2.11 times 1.54 mm<sup>2</sup>. The best up-conversion loss is 8 dB with an LO-to-RF isolation better than 30 dB
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on; 11/2006
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    ABSTRACT: In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.
    IEEE Microwave and Wireless Components Letters 07/2006; · 1.78 Impact Factor
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    ABSTRACT: A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50Ω input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4dB small-signal gain and 34dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5GHz is also achieved.
    IEEE Microwave and Wireless Components Letters 11/2005; · 1.78 Impact Factor
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    ABSTRACT: We have successfully developed a simple and low-cost 1.9-GHz, 25-W power amplifier by using only one prematched 50-mm PHEMT with external matching circuits on a FR-4 PCB. As the output stage integrated with other driver stages and dc control circuits, a completed four-stage power-amplifier subsystem is also demonstrated. When operating at 38.5-dBm output power with π/4-DQPSK signal, the proposed power amplifier subsystem shows low distortion, with better than 75-dBc ACPR (adjacent-channel leakage power ratio) at 600 kHz and 79-dBc ACPR at 900 kHz offset from the center frequency, and is suitable for PHS 500-mW base-station applications.
    IEEE Circuits and Devices Magazine 08/2005; · 1.18 Impact Factor
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    ABSTRACT: A 3.3-3.8GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMT for wireless local-area network and multi-channel multipoint distribution service applications is demonstrated. This two-stage amplifier is designed to match fully a 50Ω input and output impedance. With dual-bias configuration, the amplifier possesses a 30.4dB small-signal gain, and a 34dBm 1-dB gain compression power with 37.1% power-added efficiency. Moreover, high linearity with a 41.5dBm third-order intercept point at a frequency of 3.5GHz is obtained.
    Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on; 01/2005
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    ABSTRACT: A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3rd-order intercept point is also measured. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 311–313, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20620
    Microwave and Optical Technology Letters 01/2005; 44(4):311 - 313. · 0.59 Impact Factor