C.C. Wang

National Cheng Kung University, Tainan, Taiwan, Taiwan

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Publications (4)0 Total impact

  • [show abstract] [hide abstract]
    ABSTRACT: A high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AIGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm PldB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with Π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.
    Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on; 01/2005
  • [show abstract] [hide abstract]
    ABSTRACT: A X-band 8-watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for the active phase radar applications is demonstrated. This amplifier is designed to fully match 50 ohm input and output impedance. With 8 volts and 850 mA DC bias condition, 17.5 dB small-signal gain, 39.3 dBm (8.5 watt) 2-dB gain compression power with 33.7% power-added efficiency and 40 dBm (10 watt) saturation power from 9.3 to 10.4 GHz can be achieved.
    Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE; 11/2004
  • [show abstract] [hide abstract]
    ABSTRACT: In this paper, a 1.9 GHz watt high power amplifier using AlGaAs/InGaAs/GaAs PHEMT device for PHS base station applications is demonstrated. This amplifier utilizes a pre-matched FET which is composed of only a single 50 mm FET device and a MIS capacitor in a CuW flange package with other matching circuits on the FR4 PCB. Under 10 Volts and a 4 A dc bias condition, the amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm 1 dB gain compression power with 43% power-added efficiency (PAE) and 44 dBm saturated output power with 41% PAR. In addition, high linearity with 53 dBm third-order intercept point is achieved. The ACP at 600 KHz offset from 1.906 GHz when operating at 39 dBm output power with π/4-DQPSK signal is better than 71 dBc.
    Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on; 12/2003
  • [show abstract] [hide abstract]
    ABSTRACT: In this paper, a Ku-band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU (outdoor unit) applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest; 02/2002

Publication Stats

12 Citations
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Institutions

  • 2002–2005
    • National Cheng Kung University
      • • Institute of Microelectronics
      • • Department of Electrical Engineering
      Tainan, Taiwan, Taiwan