-
[show abstract]
[hide abstract]
ABSTRACT: Two compact single-chip 94-GHz frequency-modulated continuous-wave (FMCW) radar modules have been developed for high-resolution sensing under adverse conditions and environments. The first module contains a monolithic microwave integrated circuit (MMIC) consisting of a mechanically and electrically tunable voltage-controlled oscillator (VCO) with a buffer amplifier, 10-dB coupler, medium-power and a low-noise amplifier, balanced rat-race high electron-mobility transistor (HEMT) diode mixer, and a driver amplifier to increase the local-oscillator signal level. The overall chip-size of the FMCW radar MMIC is 2×3.5 mm<sup>2</sup>. For use with a single transmit-receive antenna, a 94-GHz microstrip hexaferrite circulator was implemented in the module. The radar sensor achieved a tuning range of 1 GHz, an output signal power of 1.5 mW, and a conversion loss of 2 dB. The second FMCW radar sensor uses an MMIC consisting of a varactor-tuned VCO with injection port, very compact transmit and receive amplifiers, and a single-ended resistive mixer. To enable single-antenna operation, the external circulator was replaced by a combination of a Wilkinson divider and a Lange coupler integrated on the MMIC. The circuit features coplanar technology and cascode HEMTs for compact size and low cost. These techniques result in a particularly small overall chip-size of only 2×3 mm<sup>2</sup>. The packaged 94-GHz FMCW radar module achieved a tuning range of 6 GHz, an output signal power of 1.5 mW, and a conversion loss of 5 dB. The RF performance of the radar module was successfully verified by real-time monitoring the time flow of a gas-assisted injection molding process.
IEEE Transactions on Microwave Theory and Techniques 01/2003; · 1.85 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: A single-chip 94 GHz frequency modulated continuous wave (FMCW)
radar module has been developed for high resolution sensing under
adverse conditions and environments. The monolithic microwave integrated
circuit (MMIC) includes a varactor tuned VCO with injection port, very
compact transmit and receive amplifiers and a single-ended resistive
mixer. To enable bidirectional operation of a single transmit-receive
antenna a combination of a Wilkinson divider and a Lange coupler was
integrated. The circuit features coplanar technology and cascode HEMTs
for compact size and low cost. These techniques result in a particularly
small over-all chip-size of only 2×3 mm<sup>2</sup>. The packaged
94 GHz FMCW radar sensor achieved a tuning range of 6 GHz, an output
power of 1 mW and a conversion loss of 5 dB. The RF performance of the
radar module was successfully verified by real-time monitoring the time
flow of a gas-assisted injection molding process
Microwave Symposium Digest, 2002 IEEE MTT-S International; 02/2002
-
[show abstract]
[hide abstract]
ABSTRACT: In this work, we describe the impact of different mounting
configurations for flip-chip assemblies of W-band millimeter-wave
integrated circuits. Coplanar 94 GHz amplifiers with high gain have been
flip-chip mounted on both, semi-insulating (s.i.) GaAs and n-type doped
silicon (n-Si) carriers. The influence of carrier thickness and
conductivity on the isolation between the input and output port was
investigated to minimize the power leakage into parasitic modes in the
flip-chip substrate. The use of lossy n-Si substrates resulted in a
significant reduction of feedback and crosstalk effects, and thus an
unconditional stable operation of the flip-chip packaged W-band
amplifier MMICs was achieved
Microwave Symposium Digest, 2001 IEEE MTT-S International; 02/2001
-
[show abstract]
[hide abstract]
ABSTRACT: Millimeter wave harmonic oscillators taking advantage of the
push-push principle are demonstrated, allowing the use of the second
harmonic of the oscillators to extend the applicable frequency range of
standard pseudomorphic HEMTs to 94 and 140 GHz. Two configuration
schemes are realized. An improved approach using a drain-connected pair
of oscillators for efficient and compact circuit design and high output
power is presented. Using this approach, oscillators at 94 GHz and 135
GHz were developed, with more than 0 dBm and -2 dBm output power and a
high suppression of the fundamental signal of 38 dBc and 20 dBc,
respectively. All MMICs were realized in a standard 0.13 μm pHEMT
technology using optical stepper lithography
Microwave Symposium Digest, 2001 IEEE MTT-S International; 02/2001
-
[show abstract]
[hide abstract]
ABSTRACT: The efficient stabilization of high electron mobility transistor
(HEMT) oscillator monolithic microwave integrated circuits (MMICs) for
W-band applications, using a new approach of high-order subharmonic
injection locking, is presented. Transmission- and reflection-type
injection locking techniques are applied to stabilize 94-GHz oscillators
based on GaAs pseudomorphic-HEMT technology. A voltage-controlled
oscillator MMIC was developed, consisting of the oscillator circuit and
an integrated harmonic generator that can be stabilized by injection
power levels of -45 dBm at 94 GHz using reflection-type injection
locking, allowing reference frequencies as low as the fifteenth to
twenty-first subharmonic as the input for the harmonic generator.
Additionally, an injection-locked phase-locked loop (PLL) was developed,
which enhances the locking range from 30 MHz to 1 GHz, using the
twenty-first subharmonic as a reference signal. The combination of
simple synchronization to a low-frequency reference signal and the
control of the synchronization in the injection-locked PLL allows the
generation of stable and low-noise millimeter-wave signals with a fully
integrated MMIC source
IEEE Transactions on Microwave Theory and Techniques 01/2001; · 1.85 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: For use with a commercial GaAs foundry process, an exhaustive coplanar library for passive and active elements has been developed. The library includes all coplanar elements needed for MMIC design, such as transmission lines, air-bridges, bends, probing pads, T-junctions, coupled lines and lumped passive elements. For all of them, accurate and scalable frequency dependent models have been validated from on-wafer measurement up to 120 GHz, and implemented in the HP-MDS software. This resulted in a comprehensive and precise coplanar database for the commercial United Monolithic Semiconductors (UMS) low-noise and power PHEMT foundry processes.
Microwave Conference, 2000. 30th European; 11/2000
-
[show abstract]
[hide abstract]
ABSTRACT: Despite the advantages of coplanar waveguide technology for high performance and low cost MMIC applications, its possibilities are still not thoroughly exploited for commercial applications. This paper presents an overview of trends and latest achievements in millimeter-wave coplanar integrated circuit design, such as modeling aspects, mounting techniques, and system applications. Coplanar circuit technology has shown its potential to be competitive with microstrip by recent solutions of the previously hindering technical and technological problems, and the realization of circuits for high performance millimeter-wave applications.
Microwave Conference, 2000. 30th European; 11/2000
-
[show abstract]
[hide abstract]
ABSTRACT: A coplanar regenerative frequency divider monolithic microwave
integrated circuit (MMIC) based on 0.15-μm pHEMTs on GaAs for
94/47-GHz frequency conversion has been developed, achieving a bandwidth
of 23% for stable division. A very low conversion loss of 2.5 dB was
obtained with an input level of -2 dBm and a dc power consumption of 8
mW, without using additional buffer amplifiers. The frequency of
operation can be tuned by a varactor diode in the feedback network over
a 2.5-GHz range to compensate for technology variations. Various methods
for the simulation of stable and unstable operation and bandwidth and
conversion performance are presented, using accurate modeling of the
active and passive components
IEEE Journal of Solid-State Circuits 10/2000; · 3.23 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: W-band amplifier modules with high gain and large bandwidth have
been developed for passive imaging applications, With three cascaded
waveguide modules, an average small-signal gain of 60 dB and a ±3
dB bandwidth of 15 GHz was achieved centered around 93 GHz. The
assembled three-stage amplifier monolithic microwave integrated circuits
are realized in coplanar technology for compact size and low cost.
Cascode devices, based on a 0.15 μm AlGaAs/lnGaAs/GaAs pseudomorphic
high electron mobility transistor technology allow for individual gain
control of the stages by varying the second gate voltage
IEEE Microwave and Guided Wave Letters 06/2000;
-
[show abstract]
[hide abstract]
ABSTRACT: A new integrated W-band frequency source MMIC is presented which
consists of a 94 GHz voltage-controlled oscillator (VCO) with large
tuning range and a phase comparator, forming a subharmonic
injection-locked phase-locked loop (ILPLL). The ILPLL combines
conventional injection-locking with an additional phase control loop to
improve the locking range of the oscillator significantly. The 4th
subharmonic frequency is used as the reference signal. The locking range
was increased from 80 MHz without ILPLL to 4.5 GHz with ILPLL by closing
the loop with an external DC amplifier. A phase noise of -83 dBc/Hz at
100 kHz offset was achieved. Pseudomorphic GaAs HEMT's and a coplanar
circuit topology were used to allow integration into complex single-chip
subsystems and flip-chip packaging
IEEE Microwave and Guided Wave Letters 03/2000;
-
[show abstract]
[hide abstract]
ABSTRACT: A new approach for the stabilization of millimeter-wave solid
state oscillators using high order subharmonic injection locking is
presented. A 94 GHz VCO MMIC was developed, consisting of the oscillator
circuit and an integrated harmonic generator, based on GaAs PHEMT
technology. The oscillator can be stabilized by injection power levels
of -45 dBm at 94 GHz using the reflection type injection locking
technique, allowing reference frequencies as low as the 15<sup>th</sup>
to 21<sup>st</sup> subharmonic as the input for the harmonic generator.
Additionally, an injection locked PLL was developed, which improves the
locking range from 30 MHz to 1 GHz, using the 21<sup>st</sup>
subharmonic as a reference signal
Microwave Symposium Digest. 2000 IEEE MTT-S International; 02/2000
-
[show abstract]
[hide abstract]
ABSTRACT: A coplanar subharmonic injection locked W-band HEMT VCO with an integrated varactor diode and buffer amplifier was developed, achieving a tuning range of 10 GHz and an output power of 8 dBm at 94 GHz. The oscillator was stabilized by subharmonic injection locking to reduce phase noise and simultaneously by an external phase-locked-loop (PLL) circuit to compensate for temperature drift. The locking range of the system was extended to 1 GHz by the use of the PLL circuit.
Microwave Conference, 1999. 29th European; 11/1999
-
[show abstract]
[hide abstract]
ABSTRACT: High performance single pole double throw (SPDT) and single pole triple throw (SPTT) switches optimized for center frequencies of 94 GHz and 77 GHz, were realized in coplanar waveguide GaAs MMIC technology using resonated PIN diodes. SPDT switches are shown with 1.3 dB (<1.6 dB) insertion loss and 22 dB (>21 dB) isolation at 94 GHz (entire W-Band). SPTT switches achieve 2 dB (1.8 dB) insertion loss and 38 dB (40 dB) isolation at 94 GHz (77 GHz).
Microwave Conference, 1999. 29th European; 11/1999
-
[show abstract]
[hide abstract]
ABSTRACT: A two-stage monolithic W-band power amplifier has been developed, using 0.15 ¿m AlGaAs/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only l à 2 mm2.
Microwave Conference, 1999. 29th European; 11/1999
-
[show abstract]
[hide abstract]
ABSTRACT: A low-cost 94-GHz monolithically integrated coplanar FMCW radar
chip has been developed, using 0.15-μm AlGaAs-InGaAs-GaAs PM-HEMT
technology. The chip includes a VCO, electrically tunable over several
gigahertz, transmit and receive amplifiers, a mixer, and a directional
coupler. The monolithic microwave integrated circuits (MMICs) are as
small as 8 mm<sup>2</sup>, delivering up to 10 mW of radio frequency
(RF) power at a DC power consumption of 0.7 W. The receiver noise figure
is 6-7 dB, and the conversion gain is 10 dB
IEEE Microwave and Guided Wave Letters 03/1999;
-
[show abstract]
[hide abstract]
ABSTRACT: A coplanar regenerative frequency divider MMIC based on 0.15 μm pHEMTs on GaAs for 94/47 GHz frequency conversion has been developed, achieving a bandwidth of 2-3 percent for stable division. A very low conversion loss of 2.5 dB was obtained with an input level of -2 dBm and a DC power consumption of 8 mW, without using additional buffer amplifiers. The frequency of operation can be tuned by a varactor diode in the feedback network
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual; 02/1999
-
[show abstract]
[hide abstract]
ABSTRACT: A very compact coplanar transceiver MMIC using space-saving
dual-gate pHEMTs has been developed for an FMCW radar system. The chip
consists of a two-stage medium power amplifier, a single-ended resistive
mixer, a rat-race coupler and a single-stage high-gain amplifier, based
on 0.15 μm GaAs pHEMT technology. An output power of 10 dBm and a
conversion loss of 1.5 dB were obtained at 77 GHz. The over-all chip
size is only 1.75×1.75 mm<sup>2</sup>
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual; 02/1999
-
[show abstract]
[hide abstract]
ABSTRACT: Compact high-gain W-band multistage amplifier MMICs have been
developed in coplanar technology using 0.15 μm AlGaAs-InGaAs-GaAs
PM-HEMTs. The conventional dual-gate HEMT has been modified to include
an additional interstage network between the common-source and the
common-gate HEMT. The effect of stabilizing circuit elements has been
investigated. A gain of 10 dB per cascode stage is obtained at 94 GHz.
Multistage amplifier MMIC's with up to 40 dB gain have been realized
IEEE Microwave and Guided Wave Letters 01/1999;
-
[show abstract]
[hide abstract]
ABSTRACT: The potential of HEMT oscillators as signal sources for millimeter wave systems was investigated. Free running, varactor tuned and subharmonic injection locked oscillators, based on 0.15 ¿m AlGaAs/InGaAs/GaAs HEMTs have been developed at millimeter wave frequencies from 35 to 94 GHz. Integration of these oscillators with amplifiers in a coplanar environment has been demonstrated.
Microwave Conference, 1998. 28th European; 11/1998
-
Y. Campos Roca,
W. Marsetz,
M. Fernandez Barciela,
L. Verweyen,
M. Neumann,
M. Demmler,
H. Massler, W.H. Haydl,
M. C. Curras Francos,
E. Sanchez,
A. Hulsmann,
M. Schlechtweg
[show abstract]
[hide abstract]
ABSTRACT: This paper presents the design and performance of a single-ended and a balanced MMIC frequency doublers from 38 to 76 GHz, realized in CPW technology using 0.15-¿m PM-HEMTs on GaAs. These circuits have demonstrated an output power of nearly 10 dBm for a 16-dBm 38-GHz input signal. Their compact size and good power performance makes them attractive candidates for application in FMCW collision-avoidance radar systems, eliminating the need for W-band amplifier stages. A table-based large-signal HEMT model has been used successfully for the design of both circuits, resulting in very good agreement between predicted and measured power performance.
Microwave Conference, 1998. 28th European; 11/1998
